Effect of Electron and Hole Injection on the Photoelectric Performance of N-doped SnO2 Materials

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2016, Vol. 45 ›› Issue (12): 2908-2912.

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Effect of Electron and Hole Injection on the Photoelectric Performance of N-doped SnO2 Materials

XING Dan-xu;ZHANG Chang-wen;WANG Pei-ji

Online:2016-12-15 Published:2021-01-20

Abstract

CLC Number:

O469

XING Dan-xu;ZHANG Chang-wen;WANG Pei-ji. Effect of Electron and Hole Injection on the Photoelectric Performance of N-doped SnO2 Materials[J]. Journal of Synthetic Crystals, 2016, 45(12): 2908-2912.

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Effect of Electron and Hole Injection on the Photoelectric Performance of N-doped SnO2 Materials

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