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JOURNAL OF SYNTHETIC CRYSTALS ›› 2017, Vol. 46 ›› Issue (4): 621-626.

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Transport Properties of La0.7Sr0.3MnO3/Si Thin Films Grown by Polymer-assisted Chemical Solution Deposition

LIU Qi-ya;ZHANG Min;SONG Ting-ting   

  • Online:2017-04-15 Published:2021-01-20

Abstract: Perovskite man-ganese oxides La0.7Sr0.3MnO3 (LSMO) thin films were epitaxial growth on Si(100) substrates by the polymer-assisted chemical solution deposition (PACSD) method.Microstructure, surface morphology and electronic transport behavior were investigated by X-ray diffraction (XRD) spectra, scanning electron microscope (SEM), ρ-T curves and magnetoresistance (MR) of LSMO thin films.The surface of the LSMO thin films was smooth without crack.The LSMO thin films have a polycrystalline structure, and the grain size is about 50-70 nm.Metal-insulator transitions were observed in the samples.The transition temperature were 238 K and 246 K for 0 T and 1 T, respectively.The result of transport property suggested that the electron-electron scattering becomes dominant below the transition temperature, while the film has small polarons behavior of the adiabatic approximation above the transition temperature.

Key words: Perovskite man-ganese oxides La0.7Sr0.3MnO3 (LSMO) thin films were epitaxial growth on Si(100) substrates by the polymer-assisted chemical solution deposition (PACSD) method.Microstructure, surface morphology and electronic transport behavior were investigated by X-ray diffraction (XRD) spectra, scanning electron microscope (SEM), ρ-T curves and magnetoresistance (MR) of LSMO thin films.The surface of the LSMO thin films was smooth without crack.The LSMO thin films have a polycrystalline structure, and the grain size is about 50-70 nm.Metal-insulator transitions were observed in the samples.The transition temperature were 238 K and 246 K for 0 T and 1 T, respectively.The result of transport property suggested that the electron-electron scattering becomes dominant below the transition temperature, while the film has small polarons behavior of the adiabatic approximation above the transition temperature.

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