Abstract: Bi4Si3O12∶Sm3+ phosphors were prepared by a sol-gel technique.The crystal structure and its luminescence properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fluorescence spectra (PL).The phase of the synthesized samples calcinated at 850 ℃ is pure Bi4Si3O12 according to X-ray diffraction results.The luminescence spectra shows that Bi4Si3O12∶Sm3+phosphors could be excited effectively by the light from ultraviolet ray to blue light.The energy transfer process from Bi3+ to Sm3+ under 260 nm excitation was discussed.The obtained phosphors exhibites a strong band at 468 nm belonging to the 3P1→1S0 transition of Bi3+, and another three emissions peaks at 563 nm, 600 nm, and 649 nm, which comes from4G5/2 → 6HJ(J=5/2,7/2,9/2) transition of Sm3+.While under excitation with 467 nm, only characteristic emission of Sm3+ corresponding to the4G5/2 → 6HJ(J=5/2,7/2,9/2) transition are found.The optimum dopant concentration of Sm3+ in(Bi1-xSmx)4Si3O12 is 3mol;.

Key words: Bi4Si3O12∶Sm3+ phosphors were prepared by a sol-gel technique.The crystal structure and its luminescence properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fluorescence spectra (PL).The phase of the synthesized samples calcinated at 850 ℃ is pure Bi4Si3O12 according to X-ray diffraction results.The luminescence spectra shows that Bi4Si3O12∶Sm3+phosphors could be excited effectively by the light from ultraviolet ray to blue light.The energy transfer process from Bi3+ to Sm3+ under 260 nm excitation was discussed.The obtained phosphors exhibites a strong band at 468 nm belonging to the 3P1→1S0 transition of Bi3+, and another three emissions peaks at 563 nm, 600 nm, and 649 nm, which comes from4G5/2 → 6HJ(J=5/2,7/2,9/2) transition of Sm3+.While under excitation with 467 nm, only characteristic emission of Sm3+ corresponding to the4G5/2 → 6HJ(J=5/2,7/2,9/2) transition are found.The optimum dopant concentration of Sm3+ in(Bi1-xSmx)4Si3O12 is 3mol;.