High Qualityβ-Ga2O3 Single Crystal and Fabrication of Schottky Diode

JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (11): 2194-2199.

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High Qualityβ-Ga₂O₃ Single Crystal and Fabrication of Schottky Diode

ZHANG Jin;HU Zhuangzhuang;MU Wenxiang;TIAN Xusheng;FENG Qian;JIA Zhitai;ZHANG Jincheng;TAO Xutang;HAO Yue

Online:2020-11-15 Published:2021-01-20

Abstract

CLC Number:

TN311.7

ZHANG Jin, HU Zhuangzhuang, MU Wenxiang, TIAN Xusheng, FENG Qian, JIA Zhitai, ZHANG Jincheng, TAO Xutang, HAO Yue. High Qualityβ-Ga₂O₃ Single Crystal and Fabrication of Schottky Diode[J]. Journal of Synthetic Crystals, 2020, 49(11): 2194-2199.

[1]	WANG Kaikai, DU Song, XU Hao, LONG Hao. Performance Optimization Study of Ga2O3/NiOx Schottky Barrier Diodes [J]. JOURNAL OF SYNTHETIC CRYSTALS, 0, (): 1-.
[2]	QU Minmin, YU Jiangang, LI Ziwei, LI Wangwang, LEI Cheng, LI Tengteng, LI Fengchao, LIANG Ting, JIA Renxu. Simulation Study on Electrical Performance of a New Composite Terminal Gallium Oxide Schottky Diode [J]. JOURNAL OF SYNTHETIC CRYSTALS, 0, (): 1-.

High Qualityβ-Ga₂O₃ Single Crystal and Fabrication of Schottky Diode

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