Growth Behavior of AlN Single Crystal

Welcome to Journal of Synthetic Crystals! Today is

E-mail Alert　

RSS

Share:

JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (11): 2200-2205.

Previous Articles Next Articles

Growth Behavior of AlN Single Crystal

CHENG Hongjuan;JIN Lei;WU Honglei;QI Haitao;WANG Zenghua;SHI Yuezeng;ZHANG Li

Online:2020-11-15 Published:2021-01-20

Abstract

CLC Number:

TN304.2

CHENG Hongjuan, JIN Lei, WU Honglei, QI Haitao, WANG Zenghua, SHI Yuezeng, ZHANG Li. Growth Behavior of AlN Single Crystal[J]. Journal of Synthetic Crystals, 2020, 49(11): 2200-2205.

[1]	LI Yang, CAO Kun, JIE Wanqi. Effect of Thermal Treated GaSb Substrate for Epitaxial Growth of CdZnTe Film by Close-Spaced Sublimation Method [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(10): 1705-1711.
[2]	KANG Jie, DING Ziyang, WANG Xiaoyan, LI Lianrong, SUN Weiyun, JIAO Can, SONG Yuepeng. Particle Size Regulation of SiC Quantum Dots Prepared by Corrosion Method and Effect of Size on Optical Properties [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(4): 684-691.
[3]	LI Chuanhao, LI Zhonghui, PENG Daqing, ZHANG Dongguo, YANG Qiankun, LUO Weike. Study on vdW Epitaxy Mechanism and Stress Modulation of Large-Size GaN Microwave Material [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(2): 252-257.
[4]	NIE Fan, HAN Shuo, ZENG Dongmei. Effect of Biaxial Strain on Electronic and Optical Properties of Single-Layer CdZnTe [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(8): 1394-1399.
[5]	SONG Changkun, HUANG Xiaoying, CHEN Yingxin, YU Ying, YU Siyuan. Modulation of Semiconductor Single Quantum Dots Using Molecular Beam Epitaxy [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 982-996.
[6]	PENG Daqing, LI Zhonghui, CAI Likang, LI Chuanhao, YANG Qiankun, ZHANG Dongguo, LUO Weike. Growth and Properties of AlGaN/GaN Heterojunction Material with Coupled Barrier [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 746-752.
[7]	ZHANG Junhua, JIA Zhigang, DONG Hailiang, ZANG Maorong, LIANG Jian, XU Bingshe. Design of AlGaInN/InGaN Strain-Compensation DBR Structure [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(3): 452-459.
[8]	LU Shujuan, CHEN Beixi, ZHANG Lu, CAO Bo, ZHANG Yunbo, MA Zhiyong, QI Xingwang, YU Hongguo. Prepration of GaAs Single Crystal for Infrared LED by Vertical Gradient Freeze Technology [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(2): 235-243.
[9]	LOU Yanfang, GONG Tuochen, ZHANG Wen, GUO Yu, PENG Tonghua, YANG Jian, LIU Chunjun. Fabrication and Characterizations of 8-Inch n Type 4H-SiC Single Crystal Substrate [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(12): 2131-2136.
[10]	LIU Guofeng, ZUO Ran. Quantum Chemistry Study on Gas Reactions Involved with Radicals in GaN-MOVPE Process [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(3): 469-476.
[11]	LIU Bing;PU Hongbin;ZHAO Ran;ZHAO Ziqiang;BAO Huiqiang;LI Longyuan;LI Jin;LIU Sujuan. Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(4): 570-575.
[12]	LAN Tianping;BIAN Yiwu;ZHOU Chunfeng;SONG Yu. Study on EL2 Concentration Optimization of VGF Semi-insulating Gallium Arsenide Single Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(3): 412-416.
[13]	NIU Nan-nan;ZUO Ran. Quantum Chemistry Study on Surface Adsorption in MOCVD Growth of AlN [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2019, 48(7): 1268-1274.
[14]	LI Fan-sheng;YU Xiao-ying;TANG Wen-han;FANG Hui;WANG Ru-zhi. Study on Formation and Electronic Structure of (100) Characteristic Plane of TiO2 Material [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2019, 48(4): 611-615.
[15]	ZHAO Xue-ping;ZHANG Ming;BAI Pu-cun;HOU Xiao-hu;LIU Fei;YAN Hui. Effect of Cu-Excess on the Structural and Optoelectronic Properties of Cu1 +xAl1-xO2(0≤x≤0.04) Thin Films [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2019, 48(4): 633-640.

Growth Behavior of AlN Single Crystal

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments