Exploration of n-Type Doping in Two-Dimensional BN Materials:Calculation of Charged Defects Based on First Principles

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2020, Vol. 49 ›› Issue (9): 1646-1652.

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Exploration of n-Type Doping in Two-Dimensional BN Materials:Calculation of Charged Defects Based on First Principles

LIU Xuefei;LYU Bing;LUO Zijiang

Online:2020-09-15 Published:2021-01-20

Abstract

CLC Number:

O47

LIU Xuefei;LYU Bing;LUO Zijiang. Exploration of n-Type Doping in Two-Dimensional BN Materials:Calculation of Charged Defects Based on First Principles[J]. Journal of Synthetic Crystals, 2020, 49(9): 1646-1652.

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Exploration of n-Type Doping in Two-Dimensional BN Materials:Calculation of Charged Defects Based on First Principles

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