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JOURNAL OF SYNTHETIC CRYSTALS ›› 2021, Vol. 50 ›› Issue (3): 504-508.

• Research Articles • Previous Articles     Next Articles

Theoretical Study on the Photogalvanic Effect of Monolayer 2H-MoTe2

LUO Bing1, CHEN Yan2, XU Zhonghui1   

  1. 1. School of Information Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China;
    2. School of Electrical Engineering and Automation, Jiangxi University of Science and Technology, Ganzhou 341000, China
  • Received:2020-11-05 Online:2021-03-15 Published:2021-04-15

Abstract: The band gap of the material is an important factor affecting the detection ranges of the photodetector. The monolayer 2H-MoTe2 has attracted a wide range of research interests due to its suitable band gap. In this paper, based on the non-equilibrium Green's function-density functional theory, using first-principles methods, the photogalvanic effect(PGE) of the monolayer 2H-MoTe2 was studied. The results show that under linearly polarized light, the photocurrent function produced by MoTe2 is consistent with the phenomenological theory. It can generate a larger photocurrent in the photon energies range of 1.6 eV to 1.8 eV (690 nm to 770 nm). The reason for obtaining the higher photocurrent is the electron stimulated transition at the S point in the first Brillouin zone which analyzed using the band structure and density of states. Meanwhile, in the zigzag direction, when the bias voltage is 0.8 V, the photocurrent reaches its peak, but in the armchair direction, when the bias voltage is 0.4 V, the max photocurrent can be reached. The calculation results in this paper can be used to guide the design of photodetectors based on MoTe2, especially the design of infrared photodetectors.

Key words: photodetector, monolayer 2H-MoTe2, photogalvanic effect, band structure, density of state, first-principle

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