Optical and Electrical Properties of High Doping Zn/Mg LiNbO3 Films

Abstract

Abstract: LiNbO₃ (LN), 6% zinc-doped LiNbO₃ (LN∶ZnO) and 5% magnesia-doped LiNbO₃ (LN∶MgO) films were deposited on glass and silicon substrates at room temperature by radio frequency magnetron sputtering (RFMS) method. The deposited LN, LN∶ZnO and LN∶MgO films were annealed at 575 ℃ for improving crystallinity. The morphology, structure and optical properties of the films were investigated systematically by AFM, XRD, UV-Vis and the spectroscopic ellipsometer. XRD analysis shows that high doping Zn/Mg LN films and LN film have the same growth orientation. AFM, XRD and UV-Vis measurement results show that doping Zn/Mg will increase the grain size of LN films, and the red shift of the optical band gap is related to the grain size of the films. Moreover, the electrical properties of the deposited films were measured by Hall-effect instrument. The Hall-effect test indicates that the deposited LN, LN∶ZnO and LN∶MgO films are n-type semiconductor, and the change trend of the conductivity of LN∶MgO film is different from that of LN∶ZnO and LN films. It was found that the conductivity of LN∶MgO film is almost unchanged, LN∶ZnO and LN films gradually increases with the increase of temperature in temperature of 18 ℃ to 50 ℃.

Key words: lithium niobate film, zinc-doped, magnesia-doped, optical band gap, Hall-effect, electrical property

CLC Number:

XIAO Jing, CHANG Shuangju, ZHAO Li, ZHU Yabin, CHEN Yunlin. Optical and Electrical Properties of High Doping Zn/Mg LiNbO₃ Films[J]. Journal of Synthetic Crystals, 2021, 50(9): 1648-1654.

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Optical and Electrical Properties of High Doping Zn/Mg LiNbO₃ Films

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