Microstructure and Optical-Electrical Properties of Phosphorus/Boron Co-Doped Silicon Nanocrystals

Abstract

Abstract: Si/SiO₂ multilayers were fabricated by RF plasma enhanced chemical vapor deposition system, and phosphorus/boron (P/B) co-doped silicon nanocrystals (Si NCs) were obtained under the constricted crystallization of multilayers structures. Microstructures of P/B co-doped Si NCs/SiO₂ multilayers and impurities distributions were studied by Raman, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Low temperature electron paramagnetic resonance (EPR) results indicate that the non-radiative defects on Si NCs surfaces can be passivated by P and B impurities. Hall effect manifests that P and B impurities can substitutionally incorporate into Si NCs inner. Meanwhile, P impurity exhibits higher doping efficiency than B. Near-infrared photoluminescence near 1 200 nm with the wavelength compatible for optical telecommunication was detected in the small-sized P/B co-doped Si NCs. The emission intensity can be enhanced by regulating the nominal P-doping concentration. According to the time-resolved photoluminescence and EPR results, the physical mechanisms of P-doping on the radiative and non-radiative recombination processes of Si NCs were discussed, which are responsible for the enhancement of 1 200 nm photoluminescence.

Key words: Si NCs, doping, microstructure, EPR, Hall effect, photoluminescence, optical-electrical property

CLC Number:

LI Dongke, CHEN Jiaming, SUN Teng, ZHAI Zhangyin, CHEN Guibin. Microstructure and Optical-Electrical Properties of Phosphorus/Boron Co-Doped Silicon Nanocrystals[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 35-41.

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