Growth of P-Doped Diamond Large Single Crystals Along (111) Surface with Fe3P as Additive

Abstract

Abstract: Doping is an important means to control the properties of diamond. In this paper, the P-doped diamond large single crystals were synthesized by temperature gradient method at 5.6 GPa and 1 312 ℃ using Fe₃P as the phosphorus source. The results of the optical micrographs of diamond samples show that as the amount of Fe₃P additve increases, the color of diamond crystals becomes darker, the number of inclusions increases in the crystals, and the crystal shape transforms from plate to tower, even to skeletal. It indicates that the V-shaped growth region shifts to the right when Fe₃P is added. This is due to Fe₃P has effect on the properties of the catalyst. IR spectra of P-doped diamond reveal that the concentrations of nitrogen impurity in the diamond crystals increases with the increase of the Fe₃P content. It indicates that the entry of phosphorus induces nitrogen atoms to enter the diamond lattice more easily. Raman spectra results show that with the increase of Fe₃P content, the Raman peak positions of the synthesized diamond change little, but the FWHM becomes larger. This suggests that the entry of phosphorus increases the crystal lattice distortion of diamond. XPS test results show that with the increase of Fe₃P, the content of P relative to C in diamond crystal also increases. It means that phosphorus are present in the diamond crystals synthesized by Fe₃P addition.

Key words: Fe₃P, doping, (111) surface, large diamond single crystal, temperature gradient method, superhard material

CLC Number:

TQ163
O78

NIE Yuan, XU Antao, LI Shangsheng, HU Meihua, ZHAO Faqing, ZHAO Guiping, HUANG Guofeng, LI Zhanchang, ZHOU Zhenxiang, WANG Mengzhao, CHEN Jiaxi, ZHOU Xubiao. Growth of P-Doped Diamond Large Single Crystals Along (111) Surface with Fe₃P as Additive[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 587-593.

References

[1] 龚春生,李尚升,张贺.P型和N型金刚石薄膜研究进展[J].材料导报,2016,30(9):36-40.
GONG C S, LI S S, ZHANG H. Research status of P-and N-types diamond thin films[J]. Materials Review, 2016, 30(9): 36-40(in Chinese).
[2] 尤悦,李尚升,宿太超,等.高温高压下金刚石大单晶研究进展[J].物理学报,2020,69(23):30-45.
YOU Y, LI S S, SU T C, et al. Research progress of large diamond single crystals under high pressure and high temperature[J]. Acta Physica Sinica, 2020, 69(23): 30-45(in Chinese).
[3] ZHANG G F, ZHANG B, DENG Z H, et al. An experimental study on a novel diamond whisker wheel[J]. CIRP Annals, 2010, 59(1): 355-360.
[4] CHEN S T, TSAI M Y, LAI Y C, et al. Development of a micro diamond grinding tool by compound process[J]. Journal of Materials Processing Technology, 2009, 209(10): 4698-4703.
[5] 陈珈希,张喜云,李尚升,等.碳酸钙掺杂对Ⅰb型金刚石沿不同晶面生长行为的影响[J].人工晶体学报,2021,50(11):2053-2059+2066.
CHEN J X, ZHANG X Y, LI S S, et al. Effect of CaCO₃ doping on growth behavior of type Ⅰb diamond along different crystal faces[J]. Journal of Synthetic Crystals, 2021, 50(11): 2053-2059+2066(in Chinese).
[6] WANG J K, LI S S, CUI J L, et al. N-type large single crystal diamond with S doping and B-S co-doping grown in FeNi-C system[J]. International Journal of Refractory Metals and Hard Materials, 2019, 81: 100-110.
[7] LI S S, WANG J K, HU M H, et al. The first principle study and experimental of boron synergistic sulfur doping in diamond[J]. Materials Today Communications, 2020, 24: 101021.
[8] WANG J K, LI S S, JIANG Q W, et al. Effect of FeS doping on large diamond synthesis in FeNi-C system[J]. Chinese Physics B, 2018, 27(8): 088102.
[9] ZHANG H, LI S S, SU T C, et al. Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions[J]. Chinese Physics B, 2016, 25(11): 118104.
[10] KAWASHIMA H, KATO H, OGURA M, et al. Desorption time of phosphorus during MPCVD growth of n-type (001) diamond[J]. Diamond and Related Materials, 2016, 64: 208-212.
[11] GHODBANE S, OMNÈS F, BUSTARRET E, et al. N-type phosphorus-doped polycrystalline diamond on silicon substrates[J]. Diamond and Related Materials, 2008, 17(7/8/9/10): 1324-1329.
[12] GONG C S, LI S S, ZHANG H R, et al. Study on synthesis and electrical properties of slab shape diamond crystals in FeNiMnCo-C-P system under HPHT[J]. International Journal of Refractory Metals and Hard Materials, 2017, 66: 116-121.
[13] HU M H, BI N, LI S S, et al. Effects of FeNi-phosphorus-carbon system on crystal growth of diamond under high pressure and high temperature conditions[J]. Chinese Physics B, 2015, 24(3): 038101.
[14] YU K P, LI S S, YANG Q, et al. Effects of phosphorus doping via Mn₃P₂ on diamond growth along the (100) surfaces[J]. CrystEngComm, 2019, 21(44): 6810-6818.
[15] YAN B M, JIA X P, FANG C, et al. The effect of phosphorus and nitrogen co-doped on the synthesis of diamond at high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2016, 54: 309-314.
[16] 王君卓,李尚升,宿太超,等. Ⅰb型金刚石大单晶的限形生长[J].物理学报,2018,67(16):354-360.
WANG J Z, LI S S, SU T C, et al. Shape controlled growth for type Ⅰb large diamond crystals[J]. Acta Physica Sinica, 2018, 67(16): 354-360(in Chinese).
[17] WANG J Z, LI S S, HU M H, et al. C₃H₆N₆ doping effect of synthetic diamond under high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2020, 87: 105150.
[18] GUO M M, LI S S, HU M H, et al. Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system[J]. Chinese Physics B, 2020, 29(1): 018101.
[19] BURNS R C, HANSEN J O, SPITS R A, et al. Growth of high purity large synthetic diamond crystals[J]. Diamond and Related Materials, 1999, 8(8/9): 1433-1437.
[20] PAL′YANOV Y, KUPRIYANOV I, KHOKHRYAKOV A, et al. Crystal growth and characterization of HPHT diamond from a phosphorus-carbon system[J]. Diamond and Related Materials, 2003, 12(9): 1510-1516.
[21] 韩飞,李尚升,朱丽飞,等.激光拉曼光谱法在金刚石研究中的应用[J].人工晶体学报,2018,47(5):1060-1065.
HAN F, LI S S, ZHU L F, et al. Application of laser Raman spectroscopy method in research of diamond[J]. Journal of Synthetic Crystals, 2018, 47(5): 1060-1065(in Chinese).
[22] KATO H, FUTAKO W, YAMASAKI S, et al. Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source[J]. Diamond and Related Materials, 2004, 13(11/12): 2117-2120.

Growth of P-Doped Diamond Large Single Crystals Along (111) Surface with Fe₃P as Additive

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	WU Jing, LI Qinglian, ZHANG Zhongzheng, YANG Jinfeng, HAO Yongxin, LI Jiaxin, LIU Shiguo, ZHANG Ling, SUN Jun. Experimental Study on Internal Bias Electric Field of Nominally Undoped and Doped Lithium Niobate Crystals [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 571-578.
[2]	PANG Guowang, LIU Chenxi, PAN Duoqiao, SHI Leiqian, ZHANG Lili, LEI Bocheng, ZHAO Xucai, HUANG Yineng, TANG Zhe. Theoretical Study on Schottky Interfacial Charge and Schottky Regulation of ZnO/Graphene by Doping of Nonmetallic Elements (F, S, Se, Te) [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 628-636.
[3]	NING Bo, ZHANG Guoxin, YAN Bin, ZHAO Yang, SHI Xuan, ZHAO Hongquan. First-Principles Study of Y-Doped WS₂ Two-Dimensional Materials [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 643-651.
[4]	SONG Zhicheng, YANG Lu, ZHANG Chunfu, LIU Dawei, NI Yufeng, ZHANG Ting, WEI Kaifeng. Doping, Passivation and Photovoltaic Properties of Ultra-Thin Poly-Silicon [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(3): 434-440.
[5]	XIONG Mingyao, ZHANG Rui, WEN Dulin, SU Xin. Frist-Principles Study on Electric Structure of Ag-O Co-Doped p-Type AlN Nanotubes [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(3): 471-476.
[6]	XU Zhenghao, WANG Fazhan, HE Haoping. First-Principles Study on Electronic Structure and Elastic Properties of Na-Ti Co-Doped LiFePO₄ [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(2): 289-296.
[7]	YAN Minyan, GONG Changwei, ZHANG He, ZHANG Mingang. First-Principles Study on the Effect of Ti Doping on Hydrogen Storage Performance of Li-Mg-N-H Materials [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(2): 297-303.
[8]	LI Dongke, CHEN Jiaming, SUN Teng, ZHAI Zhangyin, CHEN Guibin. Microstructure and Optical-Electrical Properties of Phosphorus/Boron Co-Doped Silicon Nanocrystals [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 35-41.
[9]	HUANG Sili, XIE Quan, ZHANG Qin. First-Principles Study of P-Doped 6H-SiC [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 49-55.
[10]	REN Shanshan, FU Xiaoqian, ZHAO He, WANG Honggang. First-Principle Study on Photoelectric Properties of Mg, N Doped β-Ga₂O₃ [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 56-64.
[11]	LIU Jibo, PANG Guowang, MA Lei, LIU Lizhi, WANG Xiaodong, SHI Leiqian, PAN Duoqiao, LIU Chenxi, ZHANG Lili, LEI Bocheng, ZHAO Xucai, HUANG Yineng. Electronic Structure and Optical Properties of C and Ti Doped GaN by GGA+U Method [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 77-84.
[12]	ZHOU Tingyan, ZHAO Min, YANG Kun, JIA Weihai, HUANG Haishen, WU Bo. Transition Metal (Sc, V, Zr) Doping Effects on the Electromagnetic Properties of Ti₂N Monolayer MXene Nanosheet [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 92-97.
[13]	MENG Xiaoyan, WU Bin, LIU Qing, WANG Yi, WU Xiuping. Preparation and Luminescent Properties of NaY(WO₄)₂:Sm³⁺ Powders [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 120-125.
[14]	LI Wang, TANG Lu, TIAN Yahui, XUE Fei, XIN Zengnian, PAN Shengjiang. Process of Preparing High Sheet Resistance P-N Junction Emitter with Low Surface Phosphorus Doping Concentration [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 132-138.
[15]	LIU Quan, ZHAN Hongquan, YUAN Menglei, LI Fu, XIE Zhipeng, WANG Chang'an. Hydrothermal Synthesis and Visible Light Photocatalytic Properties of Self-Doped SnO₂ Microspheres [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 139-147.