Microwave Power and Deposition Pressure Matching of MPCVD Diamond Films

Abstract

Abstract: High-quality diamond prepared by microwave plasma chemical vapor deposition (MPCVD) has application prospects in many high-precision fields. The film deposition experiments were carried out using microwave power 9 kW. The chamber pressures are 13 kPa, 14 kPa, 15.5 kPa, and 17 kPa, respectively. It was found that the deposited films under pressure of 15.5 kPa and 17 kPa exhibit abnormal growth in the central region, which is manifested as an obvious stepped bulge in the center. Surface morphology and film quality of the film were analyzed by SEM and Raman in order to reveal the reason for the abnormal deposition in the center of the film. Meanwhile, the deposition process was modeled, the power density and flow field distribution were calculated and analyzed by numerical simulation. The results show that at the same power, increasing the chamber pressure and compressing the plasma will lead to more dense growth in the central region of the film than that in the edge region and obvious steps in the central region of the diamond film, due to the short mean free path and insufficient diffusion capacity. The overall growth rate, uniformity and quality of the film will decrease after exceeding pressure limit.

Key words: diamond film, MPCVD, deposition pressure, microwave power, uniformity, numerical simulation

CLC Number:

TQ163
TB383

ZHANG Shuai, AN Kang, SHAO Siwu, HUANG Yabo, YANG Zhiliang, CHEN Liangxian, WEI Junjun, LIU Jinlong, ZHENG Yuting, LI Chengming. Microwave Power and Deposition Pressure Matching of MPCVD Diamond Films[J]. Journal of Synthetic Crystals, 2022, 51(5): 910-919.

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