Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition

Abstract

Abstract: Based on the self-assembled equipment, the properties of Ga₂O₃ films prepared by atomization-assisted chemical vapor deposition (AA-CVD) method were studied. The effects of temperature and pressure difference on the crystal qualities of Ga₂O₃ thin films were studied by X-ray diffraction. The results show that there is a phase structure conversion process of Ga₂O₃, upon the temperature improving from 425 ℃ to 650 ℃, the crystalline structure of the thin films transform from amorphous structure, pure α-Ga₂O₃ crystal structure to α-Ga₂O₃, β-Ga₂O₃ two-phase mixed crystal structure. The effects of temperature on the thin films’ surface morphology were characterized by atomic force microscope. When the temperature increases from 475 ℃ to 650 ℃, the root-mean-square roughness of the thin films surface decrease from 26.8 nm to 24.8 nm. At the same time, the single crystal property of the α-Ga₂O₃ thin film was measured by high resolution X-ray diffraction. The result shows that the thin film sample having a full width at half maximum of only 190.8″ which prepared at the temperature of 475 ℃ and at the pressure difference of 5 Pa, it can prove that the α-Ga₂O₃ film is a highly crystallized single-crystal materia.

Key words: Ga₂O₃, thin film, atomization-assisted chemical vapor deposition, deposition temperature, differential pressure, single crystal, semiconductor

CLC Number:

LUO Yueting, XIAO Li, CHEN Yuanhao, LIANG Changxing, GONG Hengxiang. Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition[J]. Journal of Synthetic Crystals, 2022, 51(7): 1163-1168.

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