Growth and Surface Work Function of Copper Oxide Thin Films Controlled by Oxygen Partial Pressure

Abstract

Abstract: p-type binary copper oxide semiconductor films were prepared by reactive magnetron sputtering method, and the controlled growth of Cu₂O, CuO and Cu₄O₃ thin films was realized by adjusting the oxygen flow rate. The surface morphology of the films was observed by scanning electron microscopy. Meanwhile, the structure of the films was characterized by X-ray diffractometer and Raman spectroscopy. Measured by UV-Vis spectrophotometer, the band gaps of Cu₂O, CuO and Cu₄O₃ thin films are 2.89 eV, 1.55 eV and 2.74 eV, respectively. In order to further study the surface physical properties of Cu₂O, CuO and Cu₄O₃ thin films, Kelvin probe force microscope (KPFM) was used to directly measure the contact potential difference between film and probe tip (V_CPD). The results indicate that the surface work functions of Cu₂O, CuO and Cu₄O₃ thin films gradually decrease with the increase of temperature.

Key words: copper oxide, magnetron sputtering, band gap, oxygen partial pressure, surface work function, contact potential difference

CLC Number:

TB383
O484

YANG Wenyu, FU Hong. Growth and Surface Work Function of Copper Oxide Thin Films Controlled by Oxygen Partial Pressure[J]. Journal of Synthetic Crystals, 2023, 52(1): 117-124.

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