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JOURNAL OF SYNTHETIC CRYSTALS ›› 2023, Vol. 52 ›› Issue (12): 2156-2160.

• Research Articles • Previous Articles     Next Articles

Growth and Scintillation Properties of Gd3(Al,Ga)5O12∶Ce Crystal

WANG Haili1,2, LI Hui1,2, ZHOU Nanhao1,2, SHI Shuangshuang1,2, SU Jian2, ZHANG Wei1,2, CHEN Jianrong1,2, HUANG Cunxin1,2   

  1. 1. Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing 100018, China;
    2. Sinoma Synthetic Crystals Co., Ltd., Beijing 100018, China
  • Received:2023-09-25 Online:2023-12-15 Published:2023-12-26

Abstract: Ce3+ doped gadolinium aluminum gallium garnet (GAGG∶Ce) scintillation crystal has the advantages of high light output, high energy resolution, short decay time, no self radiation and non-deliquescence, which make it has a broad application prospect in nuclear medical imaging, security inspection and environment detection et al. This paper reported the Czochralski growth and scintillation properties of GAGG∶Ce single crystal. GAGG∶Ce raw material was synthesized by high temperature solid state reaction method. By means of XRD analysis, the raw material sintered at 1 500 ℃ for 12 h is verified to be pure GAGG phase. GAGG∶Ce crystal with size of ϕ50 mm×90 mm was successfully grown by Czochralski method. The transmission spectrum, X-ray excited emission spectrum and pulse height spectrum of the crystal were tested. Results show that optical transmittance at 550 nm for the sample with thickness of 7 mm reaches as high as 81.5%. The X-ray excited emission peak central wavelength of the GAGG∶Ce crystal is located at 550 nm. The light output of the GAGG∶Ce crystal is 59 000 photons/MeV and the energy resolution is 6.2%@662 keV. The decay time is 149 ns and a slow component of 748 ns.

Key words: GAGG:Ce, scintillation crystal, high temperature solid state reaction method, Czochralski method, scintillation property

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