Mechanism of Remote Heteroepitaxial GaN Growth on Graphene

Abstract

Abstract: Remote epitaxy is an emerging technology for producing single-crystalline, free-standing thin films and structures. The method uses 2D van der Waals materials as semi-transparent interlayers that enable epitaxy and release of epitaxial layers at the 2D layer interface. The use of single-layer graphene as the interlayer for heterogeneous remote epitaxial GaN nucleation layer and GaN film on the sapphire substrate was studied. The result shows that GaN nucleation island has a good orientation. Through parameter adjustment, a dense GaN nucleation layer was obtained. AFM observation and XRD detection confirm that GaN thin film has lower surface roughness and dislocation density compared with film that grow directly on sapphire substrate under the same conditions. The existence of graphene after growing GaN film was confirmed by Raman spectra.

Key words: GaN, graphene, MOCVD, remote heteroepitaxy, surface roughness, dislocation density

CLC Number:

TN304
O484.1

XU Jianxi, WANG Yuning, XU Yu, WANG Jianfeng, XU Ke. Mechanism of Remote Heteroepitaxial GaN Growth on Graphene[J]. Journal of Synthetic Crystals, 2023, 52(5): 894-900.

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