Study on Thermal Field of Growth System of CdZnTe Crystal Growth by Traveling Heater Method

Abstract

Abstract: Cadmium zinc telluride (Cd_1-xZn_xTe, referred to as CdZnTe or CZT) is a room-temperature nuclear radiation detection material, which is promising for use in the fields of medical imaging, environmental monitor and space exploration, due to its superior photoelectric properties. Traveling heater method (THM) is considered to be one of the most promising methods for growing CZT single crystals. During the crystal growth, a suitable temperature field is a prerequisite for obtaining high-quality crystals. In this paper, the Fluent software is used to study the thermal field of a resistance-heated THM growth system. A physical and mathematical model describing the thermal transport of the system is established, and an inverse simulation method for establishing temperature control points is proposed to solve the problems of the heaters’ power. The calculated values of the power of five heaters in the furnace are 225.6, 343.7, 1 045.9, 92.5 and 199.6 W respectively, which are in good agreement with the experimental measurements. Furthermore, the effects of furnace structures such as the distance between the heater and the heating tube, and the width of the heat-dissipation zone on the temperature distribution in the CZT zone in the crucible were studied. The research results show that the maximum temperature decreases by 3.7% and 5.6% when the distance between the heater and the heating tube increases from 5 mm to 10 and 15 mm, and the width of the melting zone decreases by 32.7% and 50.0% when the width of the heat-dissipation zone increases from 30 mm to 50 and 80 mm.

Key words: CdZnTe crystal, traveling heater method, semiconductor, numerical simulation, thermal field, furnace structure

CLC Number:

O782

XU Zheren, ZHANG Jijun, CAO Xiangzhi, LU Wei, LIU Hao, QI Yongwu. Study on Thermal Field of Growth System of CdZnTe Crystal Growth by Traveling Heater Method[J]. Journal of Synthetic Crystals, 2023, 52(9): 1589-1598.

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