Abstract: In recent years, organic-inorganic hybrid lead halide perovskite materials have attracted much attention in the world because of their excellent photoelectric properties, and have been successfully applied in many fields such as solar photovoltaic, photoelectric detection, electroluminescence and so on. At present, most of the device research focuses on perovskite polycrystalline materials, but perovskite single crystal materials have excellent properties such as lower defect state density, higher carrier mobility, longer carrier recombination lifetime, wider light absorption range and higher stability, which can effectively reduce the scattering loss during carrier transport and non-radiative recombination at the grain boundary, and inhibit the hysteresis effect caused by ion migration. Using perovskite single crystal thin film as the active layer of the device is expected to produce more efficient and stable perovskite photoelectric devices. At present, many preparation methods of perovskite single crystal films have been reported, mainly including solution-processed space-confined method, chemical vapor deposition method, top-down processing method, etc. Among them, solution-processed space-confined method is the most widely developed and applied. This paper focuses on the preparation of high-quality perovskite single crystal thin films by solution-processed space-confined method, and the research progress of perovskite single crystal thin films in photodetectors, solar cells, field effect transistors, light-emitting diodes and other related devices, and prospects the future development trend of perovskite single crystal thin films and photoelectric devices.

Key words: hybrid perovskite semiconductor, solution-processed space-confined method, perovskite single-crystalline thin-film, optoelectronic device, growth of single crystal thin film