Research Progress on the Growth of Silicon Carbide Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues

Abstract

Abstract: Due to its excellent physical properties, the third-generation semiconductor silicon carbide (SiC) material has very clear application prospects in the fields of high-temperature, high-frequency, high-pressure, and high-power electronics and RF microwave devices. Limited by its own technical characteristics, using traditional physical vapor transport (PVT) method to prepare SiC crystals still faces many technical challenges, making it difficult to meet the urgent demand for large-size, high-quality, and low-cost SiC single crystal substrates in current electronic devices. Top seed solution (TSSG) can be used to prepare SiC crystal at lower temperatures and near thermodynamic equilibrium conditions, which significantly compensate for the shortcomings of PVT method. TSSG method is gradually becoming one of the highly competitive innovation technologies for low-cost, high-quality SiC single crystal substrate. Firstly, the basic theory of TSSG method for SiC crystals growth is introduced, and the key points of each process are given. Then the main technical advantages of TSSG method are summarized and the research status at home and abroad are reviewed. Furthermore, the key technical issues, mechanisms, and possible solutions for the growth of SiC crystals by TSSG method are discussed. Finally, the future development of TSSG method for growing SiC crystal is given.

Key words: third-generation semiconductor, silicon carbide single crystal, top-seeded solution growth method, crystal morphology, step bunching, solvent inclusion, artificial intelligence

CLC Number:

GU Peng, LEI Pei, YE Shuai, HU Jin, WU Ge. Research Progress on the Growth of Silicon Carbide Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(5): 741-759.

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