Research Progress on Controlling the Thermal Boundary Resistance of GaN on Diamond

Abstract

Abstract: GaN high electron mobility transistor (HEMT) played major roles in radar, 5G communication, aerospace and other fields. With increasingly higher output powers developed, however, heat dissipation has become a severely problem limiting the device performance and deteriorating the device reliability and life span. Diamond has the highest thermal conductivity (＞2 000 W·m^-1·K^-1) of the bulk material. Integration diamond film with GaN HEMT can rapidly extract heat from the junction, which may increase the power density. In this paper, the technical advantages and realization approaches of GaN on diamond are stated, and the effect of the thermal boundary resistance on heat dissipation is discussed. The latest researches on the reducing of the thermal boundary resistance are thoroughly reviewed, the difficulties and development in controlling the thermal boundary resistance are also analyzed. It is clarified that under the condition of limited selection of dielectric layer materials, the thermal boundary resistance can be reduced through the enhancing of the quality of the interface between GaN and diamond.

Key words: GaN, GaN on diamond, thermal boundary resistance, dielectric layer, power density, HEMT

CLC Number:

LAN Feifei, LIU Shasha, FANG Shishu, WANG Yingmin, CHENG Hongjuan. Research Progress on Controlling the Thermal Boundary Resistance of GaN on Diamond[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(6): 913-921.

References

[1] ASIF KHAN M, BHATTARAI A, KUZNIA J N, et al. High electron mobility transistor based on a GaN-Al_xGa_1-xN heterojunction[J]. Applied Physics Letters, 1993, 63(9): 1214-1215.
[2] NAZARI M, HANCOCK B L, PINER E L, et al. Self-heating profile in an AlGaN/GaN heterojunction field-effect transistor studied by ultraviolet and visible micro-raman spectroscopy[J]. IEEE Transactions on Electron Devices, 2015, 62(5): 1467-1472.
[3] AHMAD I, KASISOMAYAJULA V, SONG D Y, et al. Self-heating in a GaN based heterostructure field effect transistor: ultraviolet and visible Raman measurements and simulations[J]. Journal of Applied Physics, 2006, 100(11): 113718.
[4] MISHRA U K, SHEN L K, KAZIOR T E, et al. GaN-based RF power devices and amplifiers[J]. Proceedings of the IEEE, 2008, 96(2): 287-305.
[5] IN M F, IN I K. Gallium nitride (GaN): physics, devices, and technology[M]. Boca Raton: CRC Press, 2015.
[6] MILLIGAN J W, SHEPPARD S, PRIBBLE W, et al. SiC and GaN wide bandgap device technology overview[C]//2007 IEEE Radar Conference. Waltham, MA, USA. IEEE, 2007: 960-964.
[7] HOO T K, ZHANG Y H, CHOWDHURY N, et al. Emerging GaN technologies for power, RF, digital, and quantum computing applications: recent advances and prospects[J]. Journal of Applied Physics, 2021, 130: 160902.
[8] MILLÁN J, GODIGNON P, PERPIÑÀ X, et al. A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163.
[9] MOUNIKA B, AJAYAN J, BHATTACHARYA S, et al. Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: a critical review[J]. Micro and Nanostructures, 2022, 168: 207317.
[10] LIU H, ZHENG X, YU Z K. The application analysis of GaN power devices in Radar transmitter[C]//2009 IET International Radar Conference. IET, 2009: 1-5.
[11] POMEROY J W, UREN M J, LAMBERT B, et al. Operating channel temperature in GaN HEMTs: dc versus RF accelerated life testing[J]. Microelectronics Reliability, 2015, 55(12): 2505-2510.
[12] YATES L, SOOD A, CHENG Z, et al. Characterization of the thermal conductivity of CVD diamond for GaN-on-diamond devices[C]//2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). Austin, TX, USA. IEEE, 2016: 1-4.
[13] WON Y, CHO J, AGONAFER D, et al. Fundamental cooling limits for high power density gallium nitride electronics[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2015, 5(6): 737-744.
[14] KALOYEROS A E, JOVÉ F A, GOFF J, et al. Review—silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications[J]. ECS Journal of Solid State Science and Technology, 2017, 6(10): P691-P714.
[15] ONN D G, WITEK A, QIU Y Z, et al. Some aspects of the thermal conductivity of isotopically enriched diamond single crystals[J]. Physical Review Letters, 1992, 68(18): 2806-2809.
[16] WAN K S, PORPORATI A A, FENG G, et al. Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate[J]. Applied Physics Letters, 2006, 88(25): 251910.
[17] ISHIKAWA H, ZHAO G Y, NAKADA N, et al. GaN on Si substrate with AlGaN/AlN intermediate layer[J]. Japanese Journal of Applied Physics, 1999, 38(5A): L492-L494.
[18] GU Y M, ZHANG Y, HUA B, et al. Interface engineering enabling next generation GaN-on-diamond power devices[J]. Journal of Electronic Materials, 2021, 50(8): 4239-4249.
[19] HANCOCK L B. Characterization of devices and materials for gallium nitride and diamond thermal management applications[EB/OL]. 2016. https://digital.library.txst.edu/server/api/core/bitstreams/b4 d29e81-1 d65-45c2-8873-7 d93afb91 d70/content.
[20] CHEN P H, LIN C L, LIU Y K, et al. Diamond heat spreader layer for high-power thin-GaN light-emitting diodes[J]. IEEE Photonics Technology Letters, 2008, 20(10): 845-847.
[21] CHAO P C, CHU K, CREAMER C, et al. Low-temperature bonded GaN-on-diamond HEMTs with 11 W/mm output power at 10 GHz[J]. IEEE Transactions on Electron Devices, 2015, 62(11): 3658-3664.
[22] KOBAYASHI A, TOMIYAMA H, OHNO Y, et al. Room-temperature bonding of GaN and diamond via a SiC layer[J]. Functional Diamond, 2022, 2(1): 142-150.
[23] ZHOU S, WAN S, ZOU B, et al. Interlayer investigations of GaN heterostructures integrated into silicon substrates by surface activated bonding[J]. Crystals, 2023, 13(2): 217.
[24] LIANG J B, KOBAYASHI A, SHIMIZU Y, et al. Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design[J]. Advanced Materials, 2021, 33(43): 2104564.
[25] SANG L W. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices[J]. Functional Diamond, 2021, 1(1): 174-188.
[26] GAO R H, WANG X H, MU F W, et al. Heterogeneous integration of thick GaN and polycrystalline diamond at room temperature through dynamic plasma polishing and surface-activated bonding[J]. Journal of Alloys and Compounds, 2024, 985: 174075.
[27] MATSUMAE T, OKITA S, FUKUMOTO S, et al. Simple low-temperature GaN/diamond bonding process with an atomically thin intermediate layer[J]. ACS Applied Nano Materials, 2023, 6(15): 14076-14082.
[28] WANG J S, SUGA T. Compensation of the warpage of CVD diamond wafers using intermediate layers for surface activated bonding[C]//2023 International Conference on Electronics Packaging (ICEP). Kumamoto, Japan. IEEE, 2023: 169-170.
[29] EJECKAM F, FRANICS D, FAILI F, et al. S2-T1: GaN-on-diamond: a brief history[C]//Lester Eastman Conference on High Performance Devices. IEEE, 2014:1-5.
[30] VIA G D, FELBINGER J G, BLEVINS J, et al. Wafer-scale GaN HEMT performance enhancement by diamond substrate integration[J]. Physica Status Solidi (c), 2014, 11(3/4): 871-874.
[31] POMEROY J, BERNARDONI M, SARUA A, et al. Achieving the best thermal performance for GaN-on-diamond[C]//2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). Monterey, CA, USA. IEEE, 2013: 1-4.
[32] FRANCIS D, KUBALL M. GaN-on-diamond materials and device technology: a review[M]//Thermal Management of Gallium Nitride Electronics. Amsterdam: Elsevier, 2022: 295-331.
[33] EJECKAM F, FRANCIS D, FAILI F, et al. GaN-on-diamond wafers: recent developments[C]//2015 China Semiconductor Technology International Conference. Shanghai, China. IEEE, 2015: 1-3.
[34] LEE W S, LEE K W, LEE S H, et al. A GaN/Diamond HEMTs with 23 W/mm for next generation high power RF application[C]//2019 IEEE MTT-S International Microwave Symposium (IMS). Boston, MA, USA. IEEE, 2019: 1395-1398.
[35] MOELLE C, KLOSE S, SZÜCS F, et al. Measurement and calculation of the thermal expansion coefficient of diamond[J]. Diamond & Related Materials, 1997, 6(5): 839-842.
[36] MANDAL S, YUAN C, MASSABUAU F, et al. Thick, adherent diamond films on AlN with low thermal barrier resistance[J]. ACS Applied Materials & Interfaces, 2019, 11(43): 40826-40834.
[37] SLACK G A, TANZILLI R A, POHL R O, et al. The intrinsic thermal conductivity of AIN[J]. Journal of Physics and Chemistry of Solids, 1987, 48(7): 641-647.
[38] JIANG X, SCHIFFMANN K, KLAGES C P. Nucleation and initial growth phase of diamond thin films on (100) silicon[J]. Physical Review B, 1994, 50(12): 8402-8410.
[39] MU F W, XU B, WANG X H, et al. A novel strategy for GaN-on-diamond device with a high thermal boundary conductance[EB/OL]. 2021: arXiv: 2107.10473. http://arxiv.org/abs/2107.10473
[40] MU F W, HE R, SUGA T. Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices[J]. Scripta Materialia, 2018, 150: 148-151.
[41] CHO J, FRANCIS D, ALTMAN D H, et al. Phonon conduction in GaN-diamond composite substrates[J]. Journal of Applied Physics, 2017, 121(5): 055105.
[42] YATES L, ANDERSON J, GU X, et al. Low thermal boundary resistance interfaces for GaN-on-diamond devices[J]. ACS Applied Materials & Interfaces, 2018, 10(28): 24302-24309.
[43] LIU J L, TIAN H M, CHEN L X, et al. Preparation of nano-diamond films on GaN with a Si buffer layer[J]. New Carbon Materials, 2016, 31(5): 518-524.
[44] HUANG X, GUO Z X. Thermal effect of epilayer on phonon transport of semiconducting heterostructure interfaces[J]. International Journal of Heat and Mass Transfer, 2021, 178: 121613.
[45] LIU D, FRANCIS D, FAILI F, et al. Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices[J]. Scripta Materialia, 2017, 128: 57-60.
[46] HEES J, KRIELE A, WILLIAMS O A. Electrostatic self-assembly of diamond nanoparticles[J]. Chemical Physics Letters, 2011, 509(1/2/3): 12-15.
[47] LEE Y C, LIN S J, PRADHAN D, et al. Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique[J]. Diamond and Related Materials, 2006, 15(2/3): 353-356.
[48] WANG Y M, ZHOU B, MA G L, et al. Effect of bias-enhanced nucleation on the microstructure and thermal boundary resistance of GaN/SiN_x/diamond multilayer composites[J]. Materials Characterization, 2023, 201: 112985.
[49] SMITH E J W, PIRACHA A H, FIELD D, et al. Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN[J]. Carbon, 2020, 167: 620-626.
[50] SONG C, KIM J, CHO J. The effect of GaN epilayer thickness on the near-junction thermal resistance of GaN-on-diamond devices[J]. International Journal of Heat and Mass Transfer, 2020, 158: 119992.
[51] BEECHEM T, GRAHAM S, HOPKINS P, et al. Role of interface disorder on thermal boundary conductance using a virtual crystal approach[J]. Applied Physics Letters, 2007, 90(5): 054104.
[52] NOCHETTO H C, JANKOWSKI N R, BAR-COHEN A. The impact of GaN/substrate thermal boundary resistance on a HEMT device[C]//Proceedings of ASME 2011 International Mechanical Engineering Congress and Exposition, November 11-17, 2011, Denver, Colorado, USA. 2012: 241-249.
[53] PARK K, BAYRAM C. Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity[J]. Applied Physics Letters, 2016, 109(15): 151904.