Abstract: The preparation and characterization of infrared ZnS bulk crystal by chemical vapor deposition (CVD) method is reported in this paper. Deposition process consists of the nucleation and growth process of ZnS. The chamber pressure is kept at 500-1000Pa, the substrate temperature is controlled within 550-650℃. The active raw gases of H2S and optimum technique for ZnS growth are used. The size of infrared ZnS bulk crystal is up to 250mm×250mm×15mm . The structural and optical properties of the crystal have been analyzed by using infrared spectroscopy. The results show that the crystal obtained under these conditions is highly uniform and transparent. The transmittance from 3μm to 5μm and from 8μm to 12μm is over 70;.

Key words: The preparation and characterization of infrared ZnS bulk crystal by chemical vapor deposition (CVD) method is reported in this paper. Deposition process consists of the nucleation and growth process of ZnS. The chamber pressure is kept at 500-1000Pa, the substrate temperature is controlled within 550-650℃. The active raw gases of H2S and optimum technique for ZnS growth are used. The size of infrared ZnS bulk crystal is up to 250mm×250mm×15mm . The structural and optical properties of the crystal have been analyzed by using infrared spectroscopy. The results show that the crystal obtained under these conditions is highly uniform and transparent. The transmittance from 3μm to 5μm and from 8μm to 12μm is over 70;.