Research Progress on High-Purity SiC Powder for Single Crystal SiC Growth

Abstract

Abstract: SiC is considered as one of the more promising semiconductor materials because of its advantages such as wide band gap, high critical breakdown field strength, high thermal conductivity and high carrier saturation mobility. In recent years, physical vapor transport (PVT) method has made great breakthroughs in the preparation of large size and high quality SiC single crystal substrates, further promoting the application of SiC in the field of high voltage, high frequency and high temperature electronic devices. SiC powder is the raw material of PVT method to grow SiC single crystal. The purity of powder will directly affect the impurity content of SiC single crystal, so as to affect the electrical properties of SiC single crystal. The growth of high quality semi-insulating SiC single crystal is directly limited by the content of N element in the SiC powder. Therefore, the synthesis of high-purity SiC powder is the key to the growth of high-quality SiC single crystal by PVT method. This paper mainly introduces the synthesis methods and research status of high purity SiC powder, the advantages and disadvantages of gas-phase and solid-phase synthesis of high purity SiC powders are reviewed, and the development direction of high purity SiC powders synthesis in the future is put forward.

Key words: single crystal, high purity, SiC powder, semiconductor, physical vapor transport method

CLC Number:

LUO Hao, ZHANG Xuqing, YANG Deren, PI Xiaodong. Research Progress on High-Purity SiC Powder for Single Crystal SiC Growth[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(8): 1562-1574.

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