Effects of Chamber Materials on the Preparation of Graphene on the Oxidized Copper Foils Substrate

Abstract

Abstract: Graphene prepared by the traditional chemical vapor deposition are generally subjected to small domain area and multiple grain boundary defects, which seriously restricts the performance and application of large-area graphene. In this study, the low-pressure chemical vapor deposition technology was used to prepare graphene on the oxidized copper foils substrate in the restricted growth chambers. The growth behavior of the graphene on two kinds of restricted growth chambers (quartz and corundum) were studied. The effects of the quartz restricted growth chamber and the corundum restricted growth chamber on the nucleation and growth of graphene on the oxidized copper foils under different methane flow rates and growth time were compared. The results indicates that, compared to the quartz restricted growth chamber, although the domain sizes of graphene on the oxidized copper foils substrate in the restricted growth chamber of corundum are smaller, there are fewer deposited impurity particles on the surface of the oxidized copper foils substrate, resulting in lower nucleation density and higher crystal quality of graphene, which is more conducive to the preparation large-sized and high-quality graphene.

Key words: graphene, low pressure chemical vapor deposition, restricted growth chamber, oxidized copper foil, substrate, nucleation

CLC Number:

TQ127.1⁺1

SHEN Xi, SHI Yonggui, WAN Yuhui, FU Ying, MA Jiaheng, YANG Haodong, WANG Yijia. Effects of Chamber Materials on the Preparation of Graphene on the Oxidized Copper Foils Substrate[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1648-1654.

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