基于硅微通道的硫氧化钆X射线闪烁屏制备与性能研究

doi:10.16553/j.cnki.issn1000-985x.2025.0196

摘要/Abstract

摘要： 硫氧化钆（GOS）闪烁晶体因对高能X射线的响应度高，在无损检测与工业探伤等领域占据着不可替代的地位。商用的GOS X射线闪烁屏通常是块状陶瓷结构，由于存在光的横向串扰问题，分辨率普遍不高（小于5 lp/mm）。本文利用光刻、电感耦合等离子体（ICP）刻蚀、光辅助电化学腐蚀等工艺制备了周期为6、10和25 μm的硅微通道阵列，并采用UV胶与GOS粉末混合填充的方法成功制备出了基于硅微通道的GOS X射线闪烁屏。搭建了X射线测试系统，测量了管电压对闪烁屏亮度的影响，通过MATLAB软件对刃边图像的边缘扩散函数（ESF）进行拟合，得到调制传递函数（MTF），进而计算出闪烁屏的空间分辨率。实验结果表明：闪烁屏的亮度随着管电压的提高而增加，周期较大的闪烁屏亮度越高，周期越小的闪烁屏分辨率越大，周期为6 μm时分辨率为18.1 lp/mm，周期为10 μm时分辨率为16.8 lp/mm，周期为25 μm时分辨率为12.0 lp/mm。

关键词: X射线闪烁屏; 硫氧化钆; 硅微通道; 周期; 亮度; 分辨率

Abstract: Gadolinium oxysulfide （GOS） scintillation crystals occupy an irreplaceable position in fields such as non-destructive testing and industrial flaw detection，primarily due to their high responsiveness to high-energy X-rays. Commercially available GOS X-ray scintillation screens typically feature a bulk ceramic structure. However，their resolution is generally low （less than 5 lp/mm） due to the issue of lateral optical crosstalk. In this study，silicon microchannel arrays with periods of 6，10 and 25 μm were fabricated using processes including photolithography，inductively coupled plasma （ICP） etching，and photo-assisted electrochemical etching. Subsequently，GOS X-ray scintillation screens based on these silicon microchannels were successfully prepared via a filling method that combines ultraviolet adhesive and GOS powder. An X-ray testing system was constructed to measure the effect of tube voltage on the brightness of the scintillation screens. The edge spread function （ESF） of the edge images was fitted using MATLAB software to derive the modulation transfer function （MTF），and the spatial resolution of the scintillation screens was further calculated from the MTF. Experimental results indicate that the brightness of the scintillation screens increases with the increase in tube voltage. Specifically，scintillation screens with larger periods exhibit higher brightness，while those with smaller periods demonstrate higher resolution. The resolution values are 18.1，16.8，and 12.0 lp/mm for the screens with periods of 6，10，and 25 μm，respectively.

Key words: X-ray scintillation screen; gadolinium sulfoxide; silicon microchannel; period; brightness; resolution

中图分类号:

TN911.73

郭丁逸, 王国政, 柴羽佳, 张广印, 王蓟, 杨继凯, 郝子恒, 罗洋. 基于硅微通道的硫氧化钆X射线闪烁屏制备与性能研究[J]. 人工晶体学报, 2026, 55(2): 211-216.

GUO Dingyi, WANG Guozheng, CHAI Yujia, ZHANG Guangyin, WANG Ji, YANG Jikai, HAO Ziheng, LUO Yang. Preparation and Performance of Gadolinium Sulfoxide X-Ray Scintillation Screens Based on Silicon Microchannels[J]. Journal of Synthetic Crystals, 2026, 55(2): 211-216.

图/表 9

图1 硅微通道阵列照片

Fig.1 Photograph of silicon microchannel array

图2 硅微通道内GOS填充示意图。（a）填充前；（b）填充后

Fig.2 Schematic diagram of GOS filling in silicon microchannels. （a） Before filling in；（b） after filling in

图3 填充后的闪烁屏。（a）6 μm周期；（b）10 μm周期；（c） 25 μm周期；（d）闪烁屏实物图

Fig.3 Scintillation screen after filling in. （a） 6 μm period；（b） 10 μm period；（c） 25 μm period；（d） photograph of scintillation screen

图4 X射线测试系统

Fig.4 X-ray testing system

图5 不同X射线管电压6 μm周期灰度图片

Fig.5 Grayscale images under different X-ray tube voltages at 6 μm period

图6 不同X射线管电压10 μm周期灰度图片

Fig.6 Grayscale images under different X-ray tube voltages at 10 μm period

图7 不同X射线管电压25 μm周期灰度图片

Fig.7 Grayscale images under different X-ray tube voltages at 25 μm period

图8 不同X射线管电压下的平均灰度值折线图

Fig.8 Line chart of average gray scale values under different X-ray tube voltages

图9 刃边提取位置，ESF、LSF曲线，MTF与空间分辨率的关系。（a）25 μm周期刃边提取位置；（b）25 μm周期ESF、LSF曲线；（c）调制传递函数与空间分辨率关系

Fig.9 Relationship between edge extraction position，ESF，LSF curves，MTF and spatial resolution. （a） 25 μm period blade edge extraction position；（b） 25 μm period ESF，LSF curves；（c） modulation transfer function and spatial resolution relationship

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