欢迎访问《人工晶体学报》官方网站,今天是 分享到:

人工晶体学报 ›› 2000, Vol. 29 ›› Issue (3): 245-249.

• • 上一篇    下一篇

脉冲激光沉积碳薄膜生长中氢气的作用

  

  1. Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;Department of Aeronautics and Astronautics, Graduate School of Engineering,Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
  • 出版日期:2000-03-15 发布日期:2021-01-20

Role of Hydrogen Gas in the Growth of Carbon Thin Films by Pulsed Laser Deposition

Tsuyoshi Yoshitake;Takashi Nishiyama;Kunihito Nagayama   

  • Online:2000-03-15 Published:2021-01-20

摘要: 采用石墨靶,通过脉冲激光沉积技术在温度为20℃的玻璃和硅衬底上沉积出厚度为100nm的碳薄膜,所用的激光源是ArF激光(λ=193nm, 24ns). 通过调节氢气流量使反应室的压力在1.33×10-5~133Pa之间变化. 拉曼光谱测量显示有一1550cm-1为中心的宽峰, 这与用其他方法制备的典型类金刚石碳(DLC)膜相类似, 随着增大氢气压力,膜的吸收系数减小, 而光带隙增大. 在氢气压力为133Pa下沉积的薄膜具有大于2.5eV的光带隙, 比无氢气气氛下沉积的薄膜的光带隙大1倍. 结果表明, 氢气对蚀刻sp2键是有效的. 在PLD法中, 从靶中喷射的等离子体物质和氢分子预先被离解成原子氢, 与CVD法的情况相同,这些原子氢必定起到蚀刻sp2键的作用.

关键词: 碳薄膜;脉冲激光沉积;DLC膜;非晶态碳;光带隙;拉曼光谱

Abstract: Carbon thin films with thickness of 100 nm were deposited on glass and silicon substrates at a substrate temperature of 20℃ by pulsed laser deposition (PLD) using a graphite target. The laser source used was an ArF excimer laser (λ= 193 nm, 24ns). The ambient pressure was changed between 1.33×10-5 Pa and 133Pa by adjusting the amount of hydrogen gas flow. The Raman spectrum measurement showed a broad peak with a center of 1550 cm-1, similar to those of the typical DLC films prepared using other methods. With increasing hydrogen pressure, the absorption coefficient decreased and the optical band gap increased. The films deposited at the hydrogen pressure of 133Pa had an optical band gap of more than 2.5 eV, which is twice as large as that of films deposited with no hydrogen atmosphere.Theseresults indicate that the hydrogen gas is effective for etching the sp2 bonding fractions. In PLD method, the ejected species from the target form the plasma, and the hydrogen molecules are expected to be decomposed into atomic hydrogen. This atomic hydrogen must play the role of etching the sp2 bonding fractions, as it does for the case of CVD method.

中图分类号: