关键词: CdSe单晶体;多级提纯;气相生长;电阻率

Abstract: High quality CdSe single crystals with excess Cd(10mm in diameter and 45mm in length) were grown using modified sublimation technique,i.e.vertical unseeded vapor growth with multi-step purification.Purification of polycrystalline material and growth of CdSe single crystals were carried on in the same quartz ampoule.The resistivity of the crystal was measured to be of 107—108Ω cm order,and the electron trap densities of 108cm-3.The etch pit patterns of (110)face was reported for the first time.The results showed that this was a new and promising method for growing high quality CdSe single crystals.

Key words: High quality CdSe single crystals with excess Cd(10mm in diameter and 45mm in length) were grown using modified sublimation technique,i.e.vertical unseeded vapor growth with multi-step purification.Purification of polycrystalline material and growth of CdSe single crystals were carried on in the same quartz ampoule.The resistivity of the crystal was measured to be of 107—108Ω cm order,and the electron trap densities of 108cm-3.The etch pit patterns of (110)face was reported for the first time.The results showed that this was a new and promising method for growing high quality CdSe single crystals.