半导体GaAs—Ga0.65Al0.35As多量子阱的光谱性质及实现激光制冷的可能

人工晶体学报 ›› 2001, Vol. 30 ›› Issue (2): 159-162.

半导体GaAs—Ga0.65Al0.35As多量子阱的光谱性质及实现激光制冷的可能

张喜田;张伟力;高红;许武;秦伟平;张家骅;陈宝玖

哈尔滨师范大学物理系,;中国科学院长春物理研究所

出版日期:2001-02-15 发布日期:2021-01-20
基金资助:
国家重点基础研究发展计划(973计划);哈尔滨师范大学校科研和教改项目

Spectral Properties in Semiconductor GaAs—Ga0.65Al0.35As Multi-quantum Well(MQW) Structures and the Possibility of Laser Cooling

ZHANG Xi-tian;ZHANG Wei-Li;GAO Hong;XU Wu;QIN Wei-ping;ZHANG Jia-hua;CHEN Bao-jiu

Online:2001-02-15 Published:2021-01-20

摘要/Abstract

摘要： 我们利用光致发光(PL)和激发光谱(PLE)技术研究了GaAs量子阱的光谱性质，在GaAs量子阱的光致发光中观察到上转换发光，首次提出GaAs量子阱结构可能实现激光制冷，探索了GaAs量子阱结构的发光机理。

关键词: 光致发光;激发光谱;量子阱;激光制冷;上转换

Abstract: The spectral properties in GaAs—Ga0.65Al0.35As multi-quantum well (MQW) structures have been developed by using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy.The up-conversion of luminescence in GaAs—Ga0.65Al0.35As multi-quantum wells is observed.We put forward the possibility of laser cooling in semiconductor GaAs MQW for the first time.The mechanism of luminescence on the spectrum in GaAs MQW is researched.

Key words: The spectral properties in GaAs—Ga0.65Al0.35As multi-quantum well (MQW) structures have been developed by using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy.The up-conversion of luminescence in GaAs—Ga0.65Al0.35As multi-quantum wells is observed.We put forward the possibility of laser cooling in semiconductor GaAs MQW for the first time.The mechanism of luminescence on the spectrum in GaAs MQW is researched.

中图分类号:

O471.1

张喜田;张伟力;高红;许武;秦伟平;张家骅;陈宝玖. 半导体GaAs—Ga0.65Al0.35As多量子阱的光谱性质及实现激光制冷的可能[J]. 人工晶体学报, 2001, 30(2): 159-162.

ZHANG Xi-tian;ZHANG Wei-Li;GAO Hong;XU Wu;QIN Wei-ping;ZHANG Jia-hua;CHEN Bao-jiu. Spectral Properties in Semiconductor GaAs—Ga0.65Al0.35As Multi-quantum Well(MQW) Structures and the Possibility of Laser Cooling[J]. Journal of Synthetic Crystals, 2001, 30(2): 159-162.

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