关键词: 相场法;晶体生长;图像形成;斯特藩模型;枝晶生长;计算机模拟

Abstract: The phase-field method has been explored to solve directly the full timedependent free boundary problem described as well known Stefan equations and it has recently emerged as a viable computational tool for simulating formation of complex interfacial patterns in crystal growth. Recent research efforts have led to development of sophisticated computational techniques for modeling important dynamical processes in crystal growth and solidification. These techniques are applicable to the wide range of industrial processes. Its attractiveness is from the fact that explicit tracking of the interface and explicitly satisfying interfacial boundary conditions is completely avoided. In the past decade,the phasefield method has been used to study the fundamental subjects on crystal growth, such as the transport of heat and /or solute,the kinetics of crystal growth, the two and three dimensional dendritic growth,the pattern selection,the crystal morphology and microscopic structure etc.An overview of the phasefield method and somes new results for its application are given in this paper.