关键词: 掺质KTP晶体;生长习性;分配系数;透过;c向电导率

Abstract: Rb +: KTP and Cs +: KTP crystals have been grown respectively by slow cooling method in KTP-K6 high temperature solutions with 5mol; Rb+ or Cs+. It is found that the crystal growth habit has been changed by the doping. The distribution coefficients of Rb+ or Cs+ in corresponding growth system are 0.646 and 0.08 respectively. The lattice parameters a0 and b0 of doped KTP crystal are slightly longer than those of pure KTP crystal. By the doping of Rb+ or Cs+, the conductivity along c-direction of KTP crystal decrease obviously, but the transmission propertes of KTP crystal in wave range of 350-1100nm have not be affected.

Key words: Rb +: KTP and Cs +: KTP crystals have been grown respectively by slow cooling method in KTP-K6 high temperature solutions with 5mol; Rb+ or Cs+. It is found that the crystal growth habit has been changed by the doping. The distribution coefficients of Rb+ or Cs+ in corresponding growth system are 0.646 and 0.08 respectively. The lattice parameters a0 and b0 of doped KTP crystal are slightly longer than those of pure KTP crystal. By the doping of Rb+ or Cs+, the conductivity along c-direction of KTP crystal decrease obviously, but the transmission propertes of KTP crystal in wave range of 350-1100nm have not be affected.