固态源分子束外延法生长InGaP/GaAs异质结构的热力学分析

人工晶体学报 ›› 2010, Vol. 39 ›› Issue (6): 1406-1411.

固态源分子束外延法生长InGaP/GaAs异质结构的热力学分析

曹雪;舒永春;叶志成;皮彪;姚江宏;邢晓东;许京军

南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457

出版日期:2010-12-15 发布日期:2021-01-20
基金资助:
National High Technology Research and Development Program of China(2006AA 03Z413);Natural Science Foundation of Tianjin, China(08JCYBJC14800)

Thermodynamic Analysis of InGaP/GaAs Heterostructures Grown by Solid-source Molecular Beam Epitaxy

CAO Xue;SHU Yong-chun;YE Zhi-cheng;PI Biao;YAO Jiang-hong;XING Xiao-dong;XU Jing-jun

Online:2010-12-15 Published:2021-01-20

摘要/Abstract

摘要： 本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱附.所得到的模型与现有实验结果匹配较好.该模型的实验结果表明在InGaP的生长过程中,生长温度,In/Ga束流比及合金组分之间的相互关系,同时也与实验数据相吻合.该模型对于其他气相沉积生长方式也具有一定的适用性.

关键词: 热力学;固态源分子束外延;InGaP;GaAs;异质结构

Abstract: A thermodynamic model for molecular beam epitaxy(MBE) growth of InGaP/GaAs heterostructures was established that considers two key factors, intrinsic strain due to the lattice mismatch and the desorption of InP. The derivation of the model is presented as well as comparisons with existing experimental data. The calculation results of this model indicated that the interactions among growth temperature, In/Ga flux ratio and alloy composition during the growth of InGaP which accord with the experimental data. The model is also available for other vapor deposition methods.

Key words: A thermodynamic model for molecular beam epitaxy(MBE) growth of InGaP/GaAs heterostructures was established that considers two key factors, intrinsic strain due to the lattice mismatch and the desorption of InP. The derivation of the model is presented as well as comparisons with existing experimental data. The calculation results of this model indicated that the interactions among growth temperature, In/Ga flux ratio and alloy composition during the growth of InGaP which accord with the experimental data. The model is also available for other vapor deposition methods.

中图分类号:

O484

曹雪;舒永春;叶志成;皮彪;姚江宏;邢晓东;许京军. 固态源分子束外延法生长InGaP/GaAs异质结构的热力学分析[J]. 人工晶体学报, 2010, 39(6): 1406-1411.

CAO Xue;SHU Yong-chun;YE Zhi-cheng;PI Biao;YAO Jiang-hong;XING Xiao-dong;XU Jing-jun. Thermodynamic Analysis of InGaP/GaAs Heterostructures Grown by Solid-source Molecular Beam Epitaxy[J]. Journal of Synthetic Crystals, 2010, 39(6): 1406-1411.