关键词: 多晶硅;界面;定向生长;杂质;外场

Abstract: The development on the crystal growth of polycrystalline silicon as discussed , and the growth mechanism on the polycrystalline silicon during the directional solidification process was analyzed .Then it focuses on the morpholgy of solid-liquid interface , imputity distribution , mathematical model , numerical simulation and the effect of external field on interface-controlled for polycrystalline silicon during the solidification process , and summarizes the research on the interface in the crystal growth of polycrystalline silicon at the domestic and abroad .Finally, the paper proposes the development prospect of solid-liquid interface controlled in the crystal growth of polycrystalline silicon .

Key words: The development on the crystal growth of polycrystalline silicon as discussed , and the growth mechanism on the polycrystalline silicon during the directional solidification process was analyzed .Then it focuses on the morpholgy of solid-liquid interface , imputity distribution , mathematical model , numerical simulation and the effect of external field on interface-controlled for polycrystalline silicon during the solidification process , and summarizes the research on the interface in the crystal growth of polycrystalline silicon at the domestic and abroad .Finally, the paper proposes the development prospect of solid-liquid interface controlled in the crystal growth of polycrystalline silicon .