关键词: 诱导晶化;外延;退火;硅薄膜;晶化率

Abstract: Amorphous silicon films were prepared by magnetron co-sputtering on the substrates of P type monocrystalline silicon , which have been corroded and cleaned via a mixed of acid solutions .The silicon films were realized by a rapid thermal annealing ( RTP) at 480 ℃ for 30 min in N2 atmosphere .Optical metallographic microscope , X-ray diffractometer and Raman scattering were used to characterize the silicon films and monocrystalline substrates .The corrosion effect of mixed acid solution on monocrystalline silicon surface , the structures and band gaps of the films were investigated .The results show that , the smooth surface was obtained after the monocrystalline silicon was corroded by mixed acid solution , a-Si films was turned to crystalline silicon films after rapid thermal annealing and crystal-induced by seed crystal.The crystallization rate raduced from 90.0; to 37.0;, the grain size reduced from 6.65 nm to 1.71 nm, the band gap increased from 1.18 eV to 1.52 eV and the roughness decreased with the a-Si films increasing from 80 nm to 280 nm.

Key words: Amorphous silicon films were prepared by magnetron co-sputtering on the substrates of P type monocrystalline silicon , which have been corroded and cleaned via a mixed of acid solutions .The silicon films were realized by a rapid thermal annealing ( RTP) at 480 ℃ for 30 min in N2 atmosphere .Optical metallographic microscope , X-ray diffractometer and Raman scattering were used to characterize the silicon films and monocrystalline substrates .The corrosion effect of mixed acid solution on monocrystalline silicon surface , the structures and band gaps of the films were investigated .The results show that , the smooth surface was obtained after the monocrystalline silicon was corroded by mixed acid solution , a-Si films was turned to crystalline silicon films after rapid thermal annealing and crystal-induced by seed crystal.The crystallization rate raduced from 90.0; to 37.0;, the grain size reduced from 6.65 nm to 1.71 nm, the band gap increased from 1.18 eV to 1.52 eV and the roughness decreased with the a-Si films increasing from 80 nm to 280 nm.