关键词: 氧化镓单晶;导模法;禁带宽度

Abstract: High quality β-Ga2O3 single crystal with 25 mm in width and 100 mm in length were grown by edge-defined film-fed growth (EFG) method.The crystal apperance complete,colorless,no cracking.Powder X-ray diffraction demonstrated that the obtained crystal is β phase.High-resolution X-ray diffraction showed a full-width at half-maximum (FWHM) of the rocking curve of 93.6",indicating a high crystal quality.The ultraviolet absorption spectrum was investigated and the bandgap was estimated to be 4.77 eV.Furthermore,the effect of shouldering processing parameters on crystal quality was also discussed.

Key words: High quality β-Ga2O3 single crystal with 25 mm in width and 100 mm in length were grown by edge-defined film-fed growth (EFG) method.The crystal apperance complete,colorless,no cracking.Powder X-ray diffraction demonstrated that the obtained crystal is β phase.High-resolution X-ray diffraction showed a full-width at half-maximum (FWHM) of the rocking curve of 93.6",indicating a high crystal quality.The ultraviolet absorption spectrum was investigated and the bandgap was estimated to be 4.77 eV.Furthermore,the effect of shouldering processing parameters on crystal quality was also discussed.