关键词: Zn1-xAlxO多晶;Al掺杂;热电输运;饱和固溶度

Abstract: Zn1-x AlxO (0 ≤ x ≤ 0.005) polycrystalline bulks with hexagonal wurtzite structure were prepared by solid-state reaction method.The microstructure and thermoelectric properties of Zn1-xAlxO bulk were investigated.Doping Al makes ZnO grain increases and grain boundry decreases.The results show that the spinel ZnAl2 O4 appeared while x ＞ 0.003.The semiconductor behavior of bulks transform metallic behavior after Al doping in ZnO.Al doping is responsible for 1 orders of magnitude decrease of resistivety and the carrier concentration and mobility remarkable increase.At x =0.003 the minimum of resistivety is 1.7 mΩ · cm and the carrier concentration and mobility are maximum.The carrier concentration is 1.05 × 1021 cm-3.The mobility is 20 cm2/V · s at room temperature.The seebeck coefficient and power factor S2/p increases as the temperature increasing at 300-900 K.The maximum of the power factor is 0.4 mW/m · Ks at room temperature.The saturated solution of Al doping in ZnO is 0.003.

Key words: Zn1-x AlxO (0 ≤ x ≤ 0.005) polycrystalline bulks with hexagonal wurtzite structure were prepared by solid-state reaction method.The microstructure and thermoelectric properties of Zn1-xAlxO bulk were investigated.Doping Al makes ZnO grain increases and grain boundry decreases.The results show that the spinel ZnAl2 O4 appeared while x ＞ 0.003.The semiconductor behavior of bulks transform metallic behavior after Al doping in ZnO.Al doping is responsible for 1 orders of magnitude decrease of resistivety and the carrier concentration and mobility remarkable increase.At x =0.003 the minimum of resistivety is 1.7 mΩ · cm and the carrier concentration and mobility are maximum.The carrier concentration is 1.05 × 1021 cm-3.The mobility is 20 cm2/V · s at room temperature.The seebeck coefficient and power factor S2/p increases as the temperature increasing at 300-900 K.The maximum of the power factor is 0.4 mW/m · Ks at room temperature.The saturated solution of Al doping in ZnO is 0.003.