关键词: 阱厚;激发功率密度;峰值波长;极化效应;带隙填充

Abstract: The growth of InGaN/GaN multiple quantum wells with different well thickness grown on cplane sapphire substrate by MOCVD was reported.The dependence of photoluminescence on excitation power density and well thickness was obtained.All samples exhibited an excitation-induced blueshift of the peak emission with the increase of excitation power density,and a larger blueshift of MQWs with wider well was measured.The shift of PL peak position with increasing excitation power density and well thickness can be clarified by the model of band filling effect and shielding of built-in field.The thinnest well LED sample (1.8 nm) has the highest optical output power,which is due to the weakest built-in field,however,its emitting wavelength is only 430 nm.

Key words: The growth of InGaN/GaN multiple quantum wells with different well thickness grown on cplane sapphire substrate by MOCVD was reported.The dependence of photoluminescence on excitation power density and well thickness was obtained.All samples exhibited an excitation-induced blueshift of the peak emission with the increase of excitation power density,and a larger blueshift of MQWs with wider well was measured.The shift of PL peak position with increasing excitation power density and well thickness can be clarified by the model of band filling effect and shielding of built-in field.The thinnest well LED sample (1.8 nm) has the highest optical output power,which is due to the weakest built-in field,however,its emitting wavelength is only 430 nm.