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人工晶体学报 ›› 2017, Vol. 46 ›› Issue (3): 486-489.

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铜蒸发温度对共蒸发法制备Cu2ZnSnSe4太阳电池的影响

孙顶;李玉丽;贾雪;姚小春;迟耀丹;张力   

  1. 吉林建筑大学电气与计算机学院,长春 130118;南开大学光电子薄膜器件与技术研究所,天津 300071;吉林省智能建筑系统集成与节能控制实验室,长春 130118;吉林建筑大学电气与计算机学院,长春 130118;吉林省智能建筑系统集成与节能控制实验室,长春 130118;南开大学光电子薄膜器件与技术研究所,天津,300071
  • 出版日期:2017-03-15 发布日期:2021-01-20
  • 基金资助:
    高等学校博士学科点专项科研基金(20120031110039);吉林省科技发展计划项目(20170101111JC)

Effect of Copper Evaporation Temperature on the Performance of Cu2ZnSnSe4 Thin Film Solar Cells Prepared by Co-evaporation Process

  • Online:2017-03-15 Published:2021-01-20

摘要: 由于Cu元素的含量对Cu2ZnSnSe4(CZTSe)化合物的薄膜性质及电池性能都有影响,本文主要研究了不同铜蒸发温度对CZTSe薄膜性质及电池性能的影响.研究表明:当铜蒸发温度较低时(1400 ℃),CZTSe薄膜中含有SnSe相,同时薄膜呈N型;随着铜蒸发温度的提高,CZTSe薄膜的结晶质量明显提升.但当铜蒸发温度过高时(1500 ℃),薄膜中含有CuxSey相.二次相SnSe与CuxSey的存在都会使电池失效.最终通过优化铜的蒸发温度,在较合适的1450 ℃ 铜蒸发温度条件下制备出效率为2.63;(有效面积0.34 cm2)的CZTSe太阳电池.

关键词: 太阳电池;铜锌锡硒;共蒸发;铜

Abstract: To know well the effect of Cu concentration on the performance of of Cu2ZnSnSe4 (CZTSe) thin film solar cells.CZTSe thin film solar cells prepared at different Cu evaporation temperature was investigated.The results indicate that the low TCu(1400 ℃) cause additional reflections of secondary phase SnSe and the films are N-type conduction.The quality of crystallization of CZTSe films is improved with increasing TCu.But the secondary phase of CuxSey is observed for CZTSe films deposited at TCu of 1500 ℃.Both secondary phase of SnSe and CuxSey could cause devices electrically inactive.The best solar cell with an efficiency of 2.63; is obtained at medium TCu of 1450 ℃ (active area 0.34 cm2).

Key words: To know well the effect of Cu concentration on the performance of of Cu2ZnSnSe4 (CZTSe) thin film solar cells.CZTSe thin film solar cells prepared at different Cu evaporation temperature was investigated.The results indicate that the low TCu(1400 ℃) cause additional reflections of secondary phase SnSe and the films are N-type conduction.The quality of crystallization of CZTSe films is improved with increasing TCu.But the secondary phase of CuxSey is observed for CZTSe films deposited at TCu of 1500 ℃.Both secondary phase of SnSe and CuxSey could cause devices electrically inactive.The best solar cell with an efficiency of 2.63; is obtained at medium TCu of 1450 ℃ (active area 0.34 cm2).

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