关键词: 过渡金属二硫族化合物;FET;器件

Abstract: As a set of two-dimensional materials,transition-metal dichalcogenides(TMDs) have abundant physical properties and have attracted the attention of the academic circles for the important application prospects of its semiconducting properties in semiconductor devices in recent years.The preparation methods of TMDs materials and the progress on their application in field effect transistors are summarized,while the existing problems and potential research directions are proposed.

Key words: As a set of two-dimensional materials,transition-metal dichalcogenides(TMDs) have abundant physical properties and have attracted the attention of the academic circles for the important application prospects of its semiconducting properties in semiconductor devices in recent years.The preparation methods of TMDs materials and the progress on their application in field effect transistors are summarized,while the existing problems and potential research directions are proposed.