自发形核生长的AlN单晶湿法腐蚀研究

人工晶体学报 ›› 2017, Vol. 46 ›› Issue (7): 1239-1243.

自发形核生长的AlN单晶湿法腐蚀研究

刘理想;曹凯;汪佳;任忠鸣;邓康;吴亮

省部共建高品质特殊钢冶金与制备国家重点实验室,上海市钢铁冶金新技术开发应用重点实验室,上海大学材料科学与工程学院,上海 200072

出版日期:2017-07-15 发布日期:2021-01-20
基金资助:
国家自然科学基金(51401116,51404148);上海市科委基金(13DZ1108200,13521101102)

Research on Wet-etching of AlN Single Crystals Grown by Spontaneous Nucleation

LIU Li-xiang;CAO Kai;WANG Jia;REN Zhong-ming;DENG Kang;WU Liang

Online:2017-07-15 Published:2021-01-20

摘要/Abstract

摘要： 采用湿法腐蚀工艺,使用熔融态KOH和NaOH作为腐蚀剂,对一种物理气相传输(PVT)自发形核新工艺在2100~2250 ℃条件下生长的AlN单晶进行了腐蚀实验.通过实验及扫描电子显微镜(SEM)结果分析,得到了典型的AlN单晶c面、r系列面及m面最佳的腐蚀工艺参数及腐蚀形貌.另外,基于腐蚀形貌分析,发现了采用该自发形核新工艺生长的AlN晶体某些独特习性并计算出AlN单晶腐蚀坑密度(EPD).

关键词: AlN单晶;自发形核;湿法腐蚀

Abstract: AlN single crystals prepared by a novel spontaneous physical vapor transport (PVT) growth approach at 2100-2250 ℃ were etched in molten KOH/NaOH eutectic alloy.All samples were investigated by scanning electron microscope (SEM) after wet-etching, optimal parameters and morphologies for c-plane, r-planes and m-plane of AlN single crystals are obtained.The growth habits and etch pit densities (EPD) of crystals grown by proposed novel spontaneous approach are also revealed.

Key words: AlN single crystals prepared by a novel spontaneous physical vapor transport (PVT) growth approach at 2100-2250 ℃ were etched in molten KOH/NaOH eutectic alloy.All samples were investigated by scanning electron microscope (SEM) after wet-etching, optimal parameters and morphologies for c-plane, r-planes and m-plane of AlN single crystals are obtained.The growth habits and etch pit densities (EPD) of crystals grown by proposed novel spontaneous approach are also revealed.

中图分类号:

TN304

刘理想;曹凯;汪佳;任忠鸣;邓康;吴亮. 自发形核生长的AlN单晶湿法腐蚀研究[J]. 人工晶体学报, 2017, 46(7): 1239-1243.

LIU Li-xiang;CAO Kai;WANG Jia;REN Zhong-ming;DENG Kang;WU Liang. Research on Wet-etching of AlN Single Crystals Grown by Spontaneous Nucleation[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2017, 46(7): 1239-1243.

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