锑化铟晶体材料的发展及应用

摘要/Abstract

摘要： 锑化铟(InSb)晶体材料自发现伊始,基于其独特的物理化学性质和优良的工艺兼容性,成为了半导体材料领域研究的热点。近几十年来,由于其在红外探测领域的应用前景,更是深受国内外研究机构的广泛关注和重视,技术发展迅速。目前,InSb晶体材料作为制备高性能中波红外探测器的首选材料,应用前景和商业需求巨大,基于InSb晶体材料的红外探测器的快速发展更是大大提升了红外系统的性能,促进了红外技术在军民领域的广泛应用。本文主要介绍了InSb晶体材料的性质,梳理了国内外各公司及研究机构关于InSb晶体材料的研究进展,以及其在红外探测领域的应用情况,对其发展前景和趋势进行了展望。

关键词: 锑化铟晶体, 半导体, 红外探测器, 发展, 应用

Abstract: Indium antimonide (InSb) crystal has became a hot spot in the field of semiconductor materials due to its unique physicochemical properties and excellent process compatibility since it is discovered. In recent years, as its application prospect in the field of infrared detection, it is widely concerned and valued by many research institution all over the world, and the technology has developed rapidly. At present, InSb crystal is the first choice for the preparation of high-performance medium wave infrared detector, which has great application prospect and commercial demand. The rapid development of infrared detector based on InSb crystal have greatly improved the performance of the infrared system and it promoted the infrared technology wide application in military and civil fields. This paper mainly introduce the properties of InSb crystal and summarize the research progress of InSb crystal at home and abroad, as well as its application in the field of infrared detection. Finally, the prospect and trend of its development is prospected.

Key words: InSb crystal, semiconductor, infrared detector, development, application

中图分类号:

TN213

柏伟, 赵超, 刘铭. 锑化铟晶体材料的发展及应用[J]. 人工晶体学报, 2020, 49(12): 2230-2243.

BAI Wei, ZHAO Chao, LIU Ming. Development and Application of InSb Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2230-2243.

参考文献

[1] Hamidreza S. Optimisation of cooled InSb detectors[J].Ⅲ-Ⅴs Review,2004,17(7):27-31.
[2] 柏伟,庞新义.4英寸高质量InSb晶体生长研究[J].红外,2018,39(9): 8-13.
[3] 付安英,马睿,薛三旺.高灵敏度室温锑化铟红外探测器研制[J].现代电子技术,2007,30(2):182-183.
[4] 林达荃.锑化铟的物理特性及其应用[J].物理,1963,2:72-81.
[5] Gatos H C, Moody P L, Lavine M C. Growth of InSb crystals in the <111> polar direction[J]. Journal of Appliede Physics, 1960, 31: 212-213.
[6] Mueller R K, Jacobson R L. Growth twins in indium antimonide[J]. Journal of Appliede Physics, 1961, 32: 550-551.
[7] Witt A F, Gatos H C, Lichtensteiger M, et al. Crystal growth and steady-state segregation under zero gravity: InSb[J]. Journal of The Electrochemical Society, 1975, 122(2): 276-283.
[8] Benz K W, Muller G. GaSb And InSb Crystals grown by vertical and horizontal travelling heater method[J]. Journal of Crystal Growth, 1979, 46: 35-42.
[9] Chaudhuri K D, Anita L, Poonarn S, et al. Electron transport in heavily doped and compensated n-type InSb in the temperature range 4.2~300 K[J]. Physical Review B, 1980, 22: 6319-6324.
[10] Yasuhiro H, Yasushi S, Kenji T, et al. Effect of ultrasonic vibrations on InSb pulled crystals[J]. Japanese Journal of Applied Physics, 1982, 21(9): 1273-1277.
[11] Derebail R, Wilcox W R, Regel L L. Influence of gravity on the directional solidification of indium antimonide[J]. Journal of Spacecraft and Rockets, 1993, 30(2): 202-207.
[12] Aleksandar G. Convection and segregation during growth of Ge and InSb crystals by the submerged heater method[J]. Journal of Crystal Growth, 1993, 128: 201-206.
[13] Zhou J, Larrousse M, Wilcox W R, et al. Directional solidification with ACRT[J]. Journal of Crystal Growth, 1993, 128: 173-177.
[14] Campbell T A, Koster J N. Radioscopic visualization of indium antimonide growth by the vertical Bridgman-Stockbarger technique[J]. Journal of Crystal Growth, 1995, 147: 408-410.
[15] Kozhemyakin G N. Influence of ultrasonic vibrations on the growth of InSb crystals[J]. Journal of Crystal Growth, 1995, 149: 266-268.
[16] Lin M H, Kou S. Segragation control in Czochralski pulling of InSb single crystals[J]. Journal of Crystal Growth, 1995, 152: 256-260.
[17] Mohan P, Senguttuvan N, Babu S M, et al. Growth of inclusion-free InSb crystals by vertical Bridgman method[J]. Journal of Crystal Growth, 2000, 211: 207-210.
[18] Zemskov V S, Raukhman M R, Shalimov V P, et al. The influence of arrangement of growth setups onboard a spacecraft on microgravity conditions of experiments: an example of floating zone melting of InSb∶Te onboard the Foton-3 satellite[J]. Cosmic Research, 2004, 42(2):144-154.
[19] Wang J B, Regel L L, Wilcox W R. Detached solidification of InSb on earth[J]. Journal of Crystal Growth, 2004, 260: 590-599.
[20] 赵建忠.InSb焦平面探测器的发展现状与趋势[J].红外技术,2016,38(11):905-913.
[21] Flint P. CMP process comparison for 150 mm larger area InSb (111) B focal plane array substrates[C]. SPIE, 2009, 7487: 74870C(1-12).
[22] Grant L R. Progress in III-V materials technology[C]. SPIE, 2004, 5621: 58-65.
[23] Furlong M J, Martinez R, Amirhaghi S, et al. Scaling up wafer production: innovation and challenges for epitaxy ready GaSb and InSb substrates[C]. SPIE, 2011, 8012: 801211: 1-10.
[24] Micklethwaite W F. Advances in infrared antimonide technology[C]. SPIE, 1993, 2554: 167-174.
[25] Martinez R, Amirhaghi S, Smith B, et al. Towards the production of very low defect GaSb and InSb substrates: bulk crystal growth, defect analysis and scaling challenges[C]. SPIE, 2013, 8631: 86311N.
[26] Furlong M J, Dallas G, Meshew G, et al. Growth and characterization of 6" InSb substrates for use in large-area infrared-imaging applications[J]. Infrared Technology and Applications, 2014, 6: 907016.
[27] Nathan W G, Victor P R, Joseph G B, et al. Interface and facet control during Czochralski growth of (111) InSb crystals for cost reduction and yield improvement of IR focal plane array substrates[J]. Infrared Sensors Devices and Applications, 2014, 10: 922003.
[28] Jason L M, Nathan W G, Joseph G B, et al. Enabling on-axis InSb crystal growth for high-volume wafer production: characterizing and eliminating variation in electrical performance for IR focal plane array applications[J]. Infrared Technology and Applications, 2016, 5: 981915.
[29] 雷胜琼.昆明物理所锑化铟红外材料、器件研究进展[J].红外与激光工程,2007,36(s1):15-16.
[30] 田敬民.锑化铟磁敏电阻的研究[J].传感器技术,1994,4:11-17.
[31] 程姝丹.霍尔效应的应用与发展[J].电气自动化,2007,4:78-82.
[32] 张雪,梁晓庚.红外探测器发展需求[J].电光与控制,2013,20(2):41-44.
[33] 王利平,孙韶媛,王庆宝,等.红外焦平面探测器的读出电路[J].光学技术,2000,26(2):122-125.
[34] Lucy Z, Meimei T, Leslie A. Developing high-performance III-V superlattice IRFPAs for defense-challenges and solutions[C]. SPIE, 2010, 7660: 76601E.
[35] 方家熊.红外探测器技术的进展[M].天津:天津科学技术出版社,2003.
[36] 何力.先进焦平面技术导论[M].北京:国防工业出版社,2011.
[37] Fowler A M, Gatley I, McIntyre P. ALADDIN: the 1024×1024 InSb array-design description and results[C]. SPIE, 1996, 2816: 150-160.
[38] Mark A G, Larry J H, Robert B J. Flexible 640×512 InSb FPA architecture[C]. SPIE, 1997, 3061: 140-149.
[39] Beuville E, Longshore R E, Sood A K, et al. High performance large infrared and visible astronomy arrays for low background applications: instruments performance data and future developments at Raytheon[C]. SPIE, 2007, 6660: 66600B.
[40] Hoffman A W, Corrale E, Love P J. 2K×2K InSb for astronomy[C]. SPIE, 2004, 5499: 59-67.
[41] Hoffman A W, Love P J, Ando K J. Large infrared and visible arrays for low background applications: an overview of current developments at Raytheon[C]. SPIE, 2004, 5499: 240-249.
[42] 钟轶.空间遥感用InGaAs探测器低噪声电路系统设计[J].激光与红外,2009,39(5): 514-517.
[43] Gert F, James W B. Review of the state of infrared detectors for astronomy in retrospect of June 2002 workshop on scientific detectors for astronomy[C]. SPIE, 2003, 4841: 839-852.
[44] Grelner M. State of the art in large format IR FPA development at CMC electronics Cincinnati[C]. SPIE, 2003, 5074: 60-71
[45] Davis M, Devitt J, Greiner M. Advanced FPA technology development at CMC Electronics[C]. SPIE, 2004, 5406: 62-73.
[46] Rawe R, Timlin A, Davis M. Advanced large format InSb IR FPA maturation at CMC Electronics[C]. SPIE, 2004, 5563:152-162.
[47] Nesher O, Klipstein P C. High performance IR detectors at SCD present and future[C]. SPIE, 2005, 5957:59-68.
[48] Gershon G, Albo A, Eylon M. 3 mega-pixel InSb detector with 10 μm pitch[C]. SPIE, 2013, 8704: 870438.
[49] Gershon G, Albo A, Eylon M. Large format InSb infrared detector with 10 μm pixels. 2014, http://www.scd.co.il.
[50] Mcmurtry C W, Forrest W J, Moore A C, et al. James webb space telescope: characterization of flight candidate NIR InSb arrays[C]. SPIE, 2004, 5167: 144-158.
[51] 袁俊.浅析巡航导弹防御及武器系统发展[J].制导与引信,2008,29(3):12-21.
[52] 赵超.红外制导的发展趋势及其关键技术[J].电光与控制,2008,15(5):48-53.
[53] 王晓飞,张海.红外焦平面阵列成像制导技术的发展[J].战术导弹技术,2010,6(4):120-123.
[54] 刘颖,陈勇.国外精确制导武器的导引头技术发展[J].飞航导弹,2011,8:70-73.
[55] 明宝印.自动目标识别在空地制导武器上的应用特点及发展趋势[J].飞航导弹,2008,2:30-34.
[56] 牟宏山. InSb红外焦平面探测器现状与进展[J].激光与红外,2016,46(4):394-399.
[57] 刘默伟,王志刚.红外红外成像制导武器的装备概况与发展分析[J].舰船电子工程,2009,29(6):36-58.
[58] 张东辉,孙彦锋,王佳轶,等.舰载红外搜索与跟踪系统的发展[J].舰船电子工程,2008,28(3):29-31.
[59] 彭焕亮.红外焦平面热成像技术的发展[J].激光与红外,2006,36(s1):776-780.
[60] Norton P. Detector focal plane array technology[M]. Fort Belvoir; U.S. army night vision and electronic sensor directorate, 2003.
[61] 柏伟.锑化铟红外焦平面探测器发展现状[J].红外,2019,40(8):1-14.
[62] 陈西宏.弹上导引头信息对抗技术概述[J].飞航导弹,2012,1:71-75.