InSeI单晶的制备及其结构与性能研究

人工晶体学报 ›› 2020, Vol. 49 ›› Issue (12): 2252-2255.

InSeI单晶的制备及其结构与性能研究

周玄^1,2, 程国峰², 何代华¹

1.上海理工大学材料科学与工程学院,上海 200093;
2.中国科学院上海硅酸盐研究所,上海 200050

出版日期:2020-12-15 发布日期:2021-01-25
通信作者: 程国峰,博士,研究员。E-mail:gfcheng@mail.sic.ac.cn;何代华,博士,副教授。E-mail:hedh@usst.edu.cn
作者简介:周玄(1995—),男,安徽省人,硕士研究生。E-mail:xz071073@163.com
基金资助:
上海市科委科研计划(19DZ2290700);太仓市大院大所创新引领专项(TC2019DYDS01);上海市科技创新技术标准项目(20DZ2205600)

Synthesis, Structure and Properties of InSeI Single Crystals

ZHOU Xuan^1,2, CHENG Guofeng², HE Daihua¹

1. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Online:2020-12-15 Published:2021-01-25

摘要/Abstract

摘要： 利用化学气相传输法(CVT)制备了InSeI单晶。该晶体为黄色的针状物,晶体较脆。在室温下进行X射线衍射分析发现,其属于四方晶系,晶胞参数为a=b=1.864 3(5) nm,c=1.012 0(3) nm,V=3.517 2 nm³,空间群为I4₁/a。紫外可见光吸收光谱、光致发光光谱等结果显示该晶体的禁带宽度是2.48 eV,在一定波段光的激发下,InSeI单晶在600 nm左右有较宽的发射峰,表明该晶体的发光方式为缺陷态发光。介电温谱表明InSeI单晶在440 K时其四方相的结构发生了相变。

关键词: InSeI, 金属基硫卤化合物, 化学气相传输法, 光致发光, 禁带宽度, 介电性能

Abstract: InSeI single crystals were synthesized by the chemical vapor transport (CVT) method. The crystal is yellow needle-shaped and brittle. X-ray diffraction results at room temperature show the tetragonal system of InSeI, with lattice parameters of a=b=1.864 3(5) nm, c=1.012 0(3) nm, V=3.517 2 nm³, and space group is I4₁/a. The ultraviolet-visible absorption spectrum, photoluminescence spectrum results show that InSeI has a 2.48 eV band gap, under the excitation of a certain band of light, InSeI single crystal has a wide emission peak at about 600 nm, which indicates that the luminescence mode of the crystal is defect state luminescence. The dielectric temperature spectrum indicates that a phase transition happened in the tetragonal structure of InSeI crystals at 440 K.

Key words: InSeI, metal based thiohalide, chemical vapor transport method, photoluminescence, band gap, dielectric property

中图分类号:

周玄, 程国峰, 何代华. InSeI单晶的制备及其结构与性能研究[J]. 人工晶体学报, 2020, 49(12): 2252-2255.

ZHOU Xuan, CHENG Guofeng, HE Daihua. Synthesis, Structure and Properties of InSeI Single Crystals[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2252-2255.

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