单层n型MoS2/p型c-Si异质结太阳电池数值模拟

摘要/Abstract

摘要： 单层二硫化钼(MoS₂)是一种具有优异光电性能的半导体材料,在太阳能能量转换中表现出很大的应用潜力。本文基于AMPS模拟软件,对单层n型MoS₂/p型c-Si异质结太阳电池进行了数值模拟与分析。通过模拟优化,n型MoS₂的电子亲和能为3.75 eV、掺杂浓度为10¹⁸ cm^-3,p型c-Si的掺杂浓度为10¹⁷ cm^-3时,太阳电池能够取得最高22.1%的转换效率。最后模拟了n型MoS₂/p型c-Si异质结界面处的界面态对太阳电池性能的影响,发现界面态密度超过10¹¹ cm^-2·eV^-1时会严重影响太阳电池的光伏性能。

关键词: 二硫化钼, c-Si, 异质结太阳电池, 转换效率, 二维材料, 数值模拟

Abstract: Monolayer MoS₂ is a promising semiconductor material for solar energy conversion application because of its excellent optoelectronic properties. In this study, monolayer n-type MoS₂/p-type c-Si heterojunction solar cell was proposed and simulated using AMPS software. The different factors influenced the photovoltaic performance of the solar cell were studied. The simulation results show that the solar cell can achieve the highest conversion efficiency of 22.1% with the electron affinity of n-type MoS₂ is 3.75 eV, the doping concentration of n-type MoS₂ is 10¹⁸ cm^-3, and the doping concentration of p-type c-Si is 10¹⁷ cm^-3. Finally, the influence of interface states at the n-type MoS₂/p-type c-Si heterointerface on the overall performance of solar cell is simulated. It is found that the interface state density over 10¹¹ cm^-2·eV^-1 will seriously affect the photovoltaic performance of solar cell.

Key words: MoS₂, c-Si, heterojunction solar cell, conversion efficiency, two-dimensional material, numerical simulation

中图分类号:

陈云, 蔡厚道. 单层n型MoS₂/p型c-Si异质结太阳电池数值模拟[J]. 人工晶体学报, 2020, 49(12): 2287-2291.

CHEN Yun, CAI Houdao. Numerical Simulation of Monolayer n-Type MoS₂/p-Type c-Si Heterojunction Solar Cells[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2287-2291.

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单层n型MoS₂/p型c-Si异质结太阳电池数值模拟

Numerical Simulation of Monolayer n-Type MoS₂/p-Type c-Si Heterojunction Solar Cells

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