Cs3Bi2I9晶体的生长及辐射探测性能

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (10): 1907-1912.

Cs₃Bi₂I₉晶体的生长及辐射探测性能

孙啟皓, 郝莹莹, 张鑫, 肖宝, 介万奇, 徐亚东

西北工业大学材料学院,凝固技术国家重点实验室,辐射探测材料与器件工信部重点实验室,西安 710072

收稿日期:2021-05-31 出版日期:2021-10-15 发布日期:2021-11-24
通讯作者: 徐亚东,教授。E-mail:xyd220@nwpu.edu.cn
作者简介:孙啟皓(1994—),男,山东省人,博士研究生。E-mail:s7hzz@mail.nwpu.com。徐亚东(1982—),男,教授,博士生导师。现任西北工业大学凝固技术国家重点实验室副主任和辐射探测材料与器件工信部重点实验室副主任。主要从事高能射线和粒子探测以及太赫兹领域所用半导体晶体材料的制备,器件设计和性能研究。主持省部级以上科研项目16项,包括国家自然科学基金4项,国家重点研发计划国际合作重点专项1项。发表高水平学术论文90余篇,授权发明专利14项。研究成果获国家技术发明二等奖1项,陕西省科技奖一等奖2项等。入选教育部青年长江学者、陕西省杰出青年计划和第十三届陕西省青年科技奖等。担任中国核学会陕西省分会副理事长,中国材料研究学会凝固科学与技术分会理事,以及中国硅酸盐学会晶体生长与材料专业委员会理事等,兼任Frontiers in Physics编委,《人工晶体学报》青年编委。
基金资助:
国家自然科学基金(51872228,U2032170,51802262);国家重点研发项目(2016YFE0115200,2016YFF0101301);陕西省自然科学基金(2019JQ-459,2020JC-12);陕西省自然科学基础研究计划(2019ZDLGY04-07);中央高校基础研究经费(3102019TS0408)

Growth and Radiation Detection Properties of Cs₃Bi₂I₉ Crystal

SUN Qihao, HAO Yingying, ZHANG Xin, XIAO Bao, JIE Wanqi, XU Yadong

Key Laboratory of Radiation Detection Materials and Devices, State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Received:2021-05-31 Online:2021-10-15 Published:2021-11-24

摘要/Abstract

摘要： 采用布里奇曼法成功制备出大尺寸(φ15 mm×50 mm)、高质量的全无机金属卤化物类钙钛矿Cs₃Bi₂I₉单晶。室温下,该晶体属于六方晶系,空间群为P6₃/mmc,密度为5.07 g/cm³,晶胞参数为a=b=0.840 nm,c=2.107 nm,熔点为632 ℃。采用粉末X射线衍射谱、紫外-可见-近红外漫反射光谱、I-V测试等表征该晶体的性质。制备Au/Cs₃Bi₂I₉/Au三明治型器件结构,采用飞行时间技术测试Cs₃Bi₂I₉晶体的载流子迁移率,得到Cs₃Bi₂I₉晶体的电子迁移率为4.33 cm²·V^-1·s^-1。根据Hecht单载流子方程拟合得到Cs₃Bi₂I₉晶体的载流子迁移率寿命积(μτ)为8.21×10^-5 cm²·V^-1,并且在500 V偏压下对α粒子的能量分辨率达到39%。

关键词: Cs₃Bi₂I₉, 辐射探测, 晶体生长, 金属卤化物钙钛矿, 布里奇曼法

Abstract: The large size and high quality inorganic metal halide perovskite Cs₃Bi₂I₉(φ15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P6₃/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs₃Bi₂I₉ is 5.07 g/cm³ and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs₃Bi₂I₉/Au is constructed to measure the carrier ability of Cs₃Bi₂I₉ crystal by the time of flight (TOF) technique. The electron mobility of Cs₃Bi₂I₉ crystal is obtained approximately of 4.33 cm²·V^-1·s^-1. The carrier mobility life product (μτ) of Cs₃Bi₂I₉ crystal is obtained ~8.21×10^-5 cm²·V^-1 by the Hecht equation, with the energy resolution of 39% at 500 V.

Key words: Cs₃Bi₂I₉, radiation detection, crystal growth, metal halide perovskite, Bridgman method

中图分类号:

O782

孙啟皓, 郝莹莹, 张鑫, 肖宝, 介万奇, 徐亚东. Cs₃Bi₂I₉晶体的生长及辐射探测性能[J]. 人工晶体学报, 2021, 50(10): 1907-1912.

SUN Qihao, HAO Yingying, ZHANG Xin, XIAO Bao, JIE Wanqi, XU Yadong. Growth and Radiation Detection Properties of Cs₃Bi₂I₉ Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(10): 1907-1912.

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Cs₃Bi₂I₉晶体的生长及辐射探测性能

Growth and Radiation Detection Properties of Cs₃Bi₂I₉ Crystal

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