高可靠性无铝有源层808 nm半导体激光器泵浦源

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (4): 757-761.

高可靠性无铝有源层808 nm半导体激光器泵浦源

刘鹏^1,2,3, 朱振², 陈康², 王荣堃¹, 夏伟^2,3, 徐现刚^1,2

1.山东大学,新一代半导体材料研究院,晶体材料国家重点实验室,济南 250100;
2.山东华光光电子股份有限公司,济南 250101;
3.济南大学物理科学与技术学院,济南 250022

收稿日期:2021-03-01 出版日期:2021-04-15 发布日期:2021-05-21
通讯作者: 朱振,博士,高工。E-mail:zhuzhen@inspur.com;徐现刚,博士,教授。E-mail:xxu@sdu.edu.cn
作者简介:刘鹏(1994—),男,山东省人,硕士研究生。E-mail:seekersliupeng@163.com
基金资助:
山东省激光装备创新创业共同体项目

High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source

LIU Peng^1,2,3, ZHU Zhen², CHEN Kang², WANG Rongkun¹, XIA Wei^2,3, XU Xiangang^1,2

1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China;
2. Shandong Huaguang Optoelectronics Co., Ltd., Jinan 250101, China;
3. School of Physics and Technology, University of Jinan, Jinan 250022, China

Received:2021-03-01 Online:2021-04-15 Published:2021-05-21

摘要/Abstract

摘要： 针对高功率808 nm激光器泵浦源的应用需求,设计并制备了InGaAsP/GaInP材料体系的无铝有源区半导体激光器。使用双非对称的限制层及波导层结构,降低了P侧材料的热阻及光吸收。优化了金属有机化学气相沉积(MOCVD)中As和P混合材料的生长条件,制备出界面陡峭的四元InGaAsP单晶外延薄膜。制作的激光器室温测试阈值电流为1.5 A,斜率效率为1.26 W/A,10 A下的功率达到10.5 W,功率转换效率为58%。连续电流测试最大功率为23 W@24.5 A,准连续电流测试最大功率为54 W@50 A,没有产生灾变性光学损伤(COD)。在15 A电流加速老化下,激光器工作4 200 h未出现功率衰减及COD现象,说明制备的无铝有源区808 nm激光器具有高可靠性的输出性能。

关键词: 无铝材料, 高可靠性, InGaAsP, 808 nm, 非对称, 泵浦源, 半导体激光器

Abstract: For 808 nm high power laser used as pump source, Al-free active-region laser diode was designed and fabricated, consisting of InGaAsP/GaInP. In this work, a double asymmetric structure of cladding and waveguide layers to reduce the thermal resistance and optical loss of P-side layers were proposed. By optimizing the MOCVD growth of As and P hybrid material, InGaAsP single-crystal epitaxial film with steep interface was fabricated. The threshold current is 1.5 A at room temperature and the slope efficiency is 1.26 W/A. The output power is 10.5 W at 10 A and the power efficiency is 58%. Under continuous wave (CW) operation, the maximum output power is 23 W@24.5 A, while it can reach 54 W@50 A under quasi continuous wave (QCW) mode without catastrophic optical damage (COD). No power degradation or COD occurred for accelerated aging over 4 200 h at 15 A, showing high long-term reliability of Al-free active-region 808 nm laser diode.

Key words: Al-free material, high reliabile, InGaAsP, 808 nm, asymmetric, pump source, semiconductor laser diode

中图分类号:

TN248.4

刘鹏, 朱振, 陈康, 王荣堃, 夏伟, 徐现刚. 高可靠性无铝有源层808 nm半导体激光器泵浦源[J]. 人工晶体学报, 2021, 50(4): 757-761.

LIU Peng, ZHU Zhen, CHEN Kang, WANG Rongkun, XIA Wei, XU Xiangang. High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(4): 757-761.

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