籽晶台形状对PVT法同质外延生长氮化铝单晶初始生长的影响

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (1): 27-34.

籽晶台形状对PVT法同质外延生长氮化铝单晶初始生长的影响

张刚¹, 付丹扬¹, 李哲¹, 黄嘉丽², 王琦琨², 任忠鸣¹, 吴亮²

1.上海大学材料科学与工程学院,上海市钢铁冶金新技术开发应用重点实验室,省部共建高品质特殊钢冶金与制备国家重点实验室,上海 200072;
2.奥趋光电技术(杭州)有限公司,杭州 311199

收稿日期:2021-09-06 出版日期:2022-01-15 发布日期:2022-02-09
通讯作者: 任忠鸣,博士,教授。E-mail:zmren@shu.edu.cn;吴亮,博士。E-mail:Jason.wu@utrendtech.com
作者简介:张刚(1996—),男,安徽省人,硕士研究生。E-mail:zhanggang1996@shu.edu.cn
基金资助:
国家自然科学基金(61874071);浙江省重点研发计划(2020C01145)

Effects of Seed-Holder Shape on the Initial Growth of AlN Single Crystals by Homoepitaxial PVT Method

ZHANG Gang¹, FU Danyang¹, LI Zhe¹, HUANG Jiali², WANG Qikun², REN Zhongming¹, WU Liang²

1. State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrous Metallurgy, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
2. Ultratrend Technologies Inc, Hangzhou 311199, China

Received:2021-09-06 Online:2022-01-15 Published:2022-02-09

摘要/Abstract

摘要： 借助专业晶体生长模拟软件FEMAG和自主开发的对流、传质、过饱和度及生长速率预测等有限元模块研究了物理气相传输法(PVT)同质外延生长氮化铝(AlN)单晶工艺时的初始传热及传质过程,并分析了不同形状籽晶台对生长室内的温度场、流场、过饱和度及生长速率的影响。温度场模拟结果表明籽晶台侧部角度改变可影响籽晶表面轴向及径向温度梯度,流场及传质模拟表明籽晶台侧部角度变化对籽晶台周边的传质有巨大影响。传质及过饱和度模拟结果表明,当籽晶台侧部角度为130°时,籽晶表面温度梯度较小且可以完全抑制籽晶台侧部多晶沉积,有利于通过同质外延工艺生长出无寄生、无裂纹的高质量氮化铝单晶锭。

关键词: 氮化铝, 物理气相传输法, 同质外延生长, 籽晶台, 数值模拟, 过饱和度, 温度梯度

Abstract: The initial temperature field and mass transport during homoepitaxial AlN growth process by the PVT method were studied by FEMAG and in-house developed convection, mass transport, supersaturation and growth rate prediction finite element modules. The influences of the seed-holder shape on the temperature field, flow field, supersaturation and growth rate were investigated in detail by numerical simulations. The simulation results show that the flow and mass transport near the seed-holder were strongly affected by the axial and radial temperature gradient near the seed deposition surface, and these temperature gradients near the seed deposition surface could be calibrated by the expansion angle θ of the seed-holder. When the angle θ of the seed-holder is 130°, the temperature gradient at seed surface is small and the polycrystalline deposition at the seed surface and seed-holder periphery can be completely prohibited, which is beneficial to grow parasitic-free, crack-free and high-quality AlN single crystals.

Key words: AlN, PVT, homoepitaxial growth, seed-holder, numerical simulation, supersaturation, temperature gradient

中图分类号:

O73
TN304

张刚, 付丹扬, 李哲, 黄嘉丽, 王琦琨, 任忠鸣, 吴亮. 籽晶台形状对PVT法同质外延生长氮化铝单晶初始生长的影响[J]. 人工晶体学报, 2022, 51(1): 27-34.

ZHANG Gang, FU Danyang, LI Zhe, HUANG Jiali, WANG Qikun, REN Zhongming, WU Liang. Effects of Seed-Holder Shape on the Initial Growth of AlN Single Crystals by Homoepitaxial PVT Method[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 27-34.

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