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人工晶体学报 ›› 2022, Vol. 51 ›› Issue (6): 996-1002.

• 研究论文 • 上一篇    下一篇

Fe掺杂GaN晶体非极性面的光学各向异性研究

武圆梦1,2, 胡俊杰1,2, 王淼1,2,3, 易觉民1,2,3, 张育民1,2,3,4, 王建峰1,2,3,4, 徐科1,2,3,4   

  1. 1.中国科技大学纳米技术与纳米仿生学院,合肥 230026;
    2.中国科学院苏州纳米技术与纳米仿生研究所,苏州 215123;
    3.江苏第三代半导体研究院,苏州 215000;
    4.苏州纳维科技股份有限公司,苏州 215123
  • 收稿日期:2022-03-08 出版日期:2022-06-15 发布日期:2022-07-18
  • 通讯作者: 易觉民,博士,项目研究员。E-mail:jmyi2020@sinano.ac.cn徐 科,博士,研究员。E-mail:kxu2006@sinano.ac.cn
  • 作者简介:武圆梦(1998—),女,安徽省人,硕士研究生。E-mail:ymwu2020@sinano.ac.cn
  • 基金资助:
    国家自然科学基金(62174175)

Optical Anisotropy of Non-Polar Surfaces of Fe-Doped GaN Crystal

WU Yuanmeng1,2, HU Junjie1,2, WANG Miao1,2,3, YI Juemin1,2,3, ZHANG Yumin1,2,3,4, WANG Jianfeng1,2,3,4, XU Ke1,2,3,4   

  1. 1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
    2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    3. Jiangsu Institute of Advanced Semiconductors Ltd., Suzhou 215000, China;
    4. Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China
  • Received:2022-03-08 Online:2022-06-15 Published:2022-07-18

摘要: 本文利用低温光致发光谱(PL)研究了Fe掺杂GaN晶体非极性a面{1120}、m面{1100} 的带边峰和Fe3+相关峰(4T1(G)- 6A1(S))的偏振发光特性。结果表明:a面与m面光学各向异性差别较小,线偏振光的电矢量E平行于c轴[0001]时(E∥c),GaN带边峰强度最小,而Fe3+零声子峰(1.299 eV)强度最强。带边峰线偏振度小,而Fe3+零声子峰线偏振度大,a面带边峰的线偏振度为26%,Fe3+零声子峰的偏振度在a面和m面分别达到55%和58%。在5 K低温下,进一步测量了Fe3+精细峰和声子伴线的偏振特性,结果表明,除了一个微弱的峰外,其他精细峰和声子伴线与Fe3+零声子峰偏振特性一致。本研究有助于拓展Fe掺杂GaN晶体材料在新型偏振光电器件领域的应用。

关键词: 氮化镓, Fe掺杂, 半绝缘, 非极性面, 光学各向异性, 光电特性, 偏振光

Abstract: In this paper, the polarization luminescence characteristics of the near-band-edge peak and Fe3+ related emission peaks(4T1(G)-6A1(S)) of the non-polar surfaces including a-plane {1120} and m-plane {1100} of Fe-doped GaN crystal were studied by low-temperature photoluminescence(PL) measurement. The results show that the optical anisotropy of a-plane and m-plane are similar. When the linearly polarized electric-field vector E is parallel to the c-direction [0001] (E//c), the intensity of GaN near-band-edge peak is the lowest, and the intensity of Fe3+ zero-phonon line (1.299 eV) is the strongest. The degree of polarization of Fe3+ zero-phonon line is greater than that of near-band-edge peak. The degree of polarization of near-band-edge peak of a-plane is 26%, while the degree of polarization of Fe3+ zero-phonon line reaches up to 55% and 58% of a-plane and m-plane GaN, respectively. The polarization characteristics of Fe3+ fine peak and the additional lines are further measured at 5 K. The results show that, except for one weak peak, other peaks are consistent with the polarization characteristics of Fe3+ zero-phonon line. This study is helpful to expand the application of Fe-doped GaN crystal in the field of novel optical and electrical devices.

Key words: GaN, Fe doping, semi-insulating, non-polar surface, optical anisotropy, optical and electrical property, polarized light

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