低余辉碘化铯闪烁晶体的生长与性能研究

摘要/Abstract

摘要： 低余辉碘化铯晶体的开发对于碘化铯晶体在现代安检及医疗CT设备中的应用具有十分重要的意义。本文首先通过原料纯化处理,去掉对晶体余辉有明显影响的杂质,然后采用共掺杂的方式,以改进的布里奇曼法生长低余辉碘化铯晶体,研究了该晶体的闪烁性能。研究结果表明,该方法获得的碘化铯晶体的余辉值约0.31%@50 ms,远低于常规碘化铯晶体的余辉值。

关键词: 碘化铯, 闪烁晶体, 低余辉, 光输出, 粉料提纯, 共掺杂

Abstract: The development of low afterglow cesium iodide crystal is very important for the application of cesium iodide crystal in modern security check and medical CT equipment. In this paper, low afterglow cesium iodide crystals by co-doping were grown by an improved Bridgman method, with purified raw materials in which impurities influencing crystal afterglow were removed, the scintillation properties of the crystal were studied. The results show that the afterglow value of the crystal obtained by this method is about 0.31%@50 ms, which is much lower than that of conventional cesium iodide crystal.

Key words: CsI, scintillation crystal, low afterglow, light output, powder purification, co-doping

中图分类号:

O734

唐华纯, 李中波, 张亮. 低余辉碘化铯闪烁晶体的生长与性能研究[J]. 人工晶体学报, 2022, 51(7): 1147-1151.

TANG Huachun, LI Zhongbo, ZHANG Liang. Growth and Properties of Low Afterglow Cesium Iodide Scintillation Crystals[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(7): 1147-1151.

参考文献

[1] 郭亚军,杨春晖.CsI(Tl)闪烁晶体研究进展[J].人工晶体学报,2004,33(1):77-80.
GUO Y J, YANG C H. Research progress of CsI(Tl) scintillation crystal[J]. Journal of Synthetic Crystals, 2004, 33(1): 77-80(in Chinese).
[2] 张明荣,葛云程.无机闪烁晶体及其产业化开发[J].新材料产业,2002(3):15-19.
ZHANG M R, GE Y C. Inorganic scintillation crystal and its industrial development[J]. Advancde Materials Industry, 2002(3): 15-19(in Chinese).
[3] 臧竞存, 刘燕行.闪烁陶瓷与晶体发展动态[C]//北京:中国硅酸盐学会2003年学术年会,2003.
ZANG J C, LIU Y X. Development trends of scintillation ceramics and crystals[C]//Beijing: 2003 Academic Annual meeting of China Silicate Society,2003(in Chinese).
[4] 董加彬.闪烁晶体在安全检查系统中的应用[J].警察技术,1994(1):7-8.
DONG J B. Application of scintillation crystal in safety inspection system[J]. Police Technology, 1994(1): 7-8(in Chinese).
[5] 郑海东,史运峰,霍梅春,等.CsI探测器余辉性能测试仪关键技术研究与实现[J].机电产品开发与创新,2015,28(4):26-28.
ZHENG H D, SHI Y F, HUO M C, et al. Research and implementation of afterglow tester for CsI detector[J]. Development & Innovation of Machinery & Electrical Products, 2015, 28(4): 26-28(in Chinese).
[6] NIKL M, VEDDA A, LAGUTA V V. Single-crystal scintillation materials[M]//DHANARAJ G, BYRAPPA K, PRASAD V,et al. Springer Handbook of Crystal Growth.[S.I]: Springer Verlag, 2010: 1663-1700.
[7] 董加彬,彭贺新.安检设备中使用的短余辉碘化铯(铊)晶体[J].警察技术,1998(2):20-23.
DONG J B, PENG H X. Short afterglow cesium iodide (thallium) crystal used in security inspection equipment[J]. Police Technology, 1998(2): 20-23(in Chinese).
[8] BRECHER C, LEMPICKI A, MILLER S R, et al. Suppression of afterglow in CsI: Tl by codoping with Eu²⁺—I: experimental[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006, 558(2): 450-457.
[9] 胡强, 李松林, 李恒远. 碘化铯(铊)晶体的研究进展[C]//中国核物理学会.二九全国核反应会暨生物物理与核物理交叉前沿研讨会论文摘要集.长沙:[s.n.],2009.
HU Q, LI S L, LI H Y. Research progress of cesium iodide (thallium) crystals[C]//Chinese Society of Nuclear Physics. Abstracts of the 2009 National Nuclear Reaction Conference and the Symposium on the Intersection of Biophysics and Nuclear Physics. Changsha: [s.n.], 2009(in Chinese).
[10] 唐华纯,李国荣,曹家军,等.碘化铯和掺铊碘化铯单晶的坩埚下降法生长工艺: CN102383195B[P].2015-02-18.
TANG H C, LI G R, CAO J J, et al. Crucible descent growth process of cesium iodide and thallium doped cesium iodide single crystals: CN102383195b[P]. 2015-02-18(in Chinese).
[11] VALAIS I, NIKOLOPOULOS D, KALIVAS N, et al. A systematic study of the performance of the CsI∶Tl single-crystal scintillator under X-ray excitation[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 571(1/2): 343-345.
[12] ALFASSI Z B, IFERGAN Y, WENGROWICZ U, et al. On the elimination of the afterglow of CsI(Tl) scintillation detector[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2009, 606(3): 585-588.

[1]	郑嘉茜, 陈俊锋, 李翔, 卢保奇, 冯鹤. 掺杂抑制氟化钡晶体慢闪烁成分研究进展[J]. 人工晶体学报, 2022, 51(6): 951-964.
[2]	丁言国, 叶崇志. YAlO₃∶Ce晶体的生长及性能研究[J]. 人工晶体学报, 2022, 51(6): 965-972.
[3]	尹佳奇, 余春燕, 翟光美, 李天保, 张竹霞. 铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响[J]. 人工晶体学报, 2022, 51(6): 1012-1019.
[4]	唐光鑫, 刘旺, 王丽荣, 李云飞, 张玲, 张国春. 非线性光学晶体Na₃La₉O₃(BO₃)₈的高功率纳秒激光三倍频特性研究[J]. 人工晶体学报, 2022, 51(3): 398-403.
[5]	沈轶明, 李嫚, 杨晨乐, 朱姝俊, 潘尚可, 潘建国. KCaCl₃:Ce晶体的生长及发光性能[J]. 人工晶体学报, 2022, 51(1): 21-26.
[6]	成双良, 任国浩, 吴云涛. Cs₂HfCl₆和Cs₂HfCl₆∶Tl晶体的生长、光学和闪烁性能研究[J]. 人工晶体学报, 2021, 50(5): 803-808.
[7]	王静, 葛烨, 解伟锋, 陈昊鸿, 李江. Eu:Lu₂O₃透明闪烁陶瓷的制备与性能[J]. 人工晶体学报, 2021, 50(3): 435-440.
[8]	张王曦月, 周琦, 周恒为, 蒋小康. 近紫外激发Gd₂ZnTiO₆∶Eu³⁺,Li⁺红色荧光粉的制备及荧光性能[J]. 人工晶体学报, 2021, 50(12): 2269-2275.
[9]	谭慧瑜, 汪瑞, 张沛雄, 尹浩, 李真, 陈振强. 钆镱共掺杂铝酸钇晶体的生长及性能研究[J]. 人工晶体学报, 2021, 50(11): 2013-2018.
[10]	朱梦淇, 温航, 王彪, 王庆波, 李静, 王继扬. 钙钛矿型闪烁晶体的研究进展[J]. 人工晶体学报, 2021, 50(10): 1844-1857.
[11]	顾鹏, 王鹏刚, 官伟明, 郑丽, 周燕. LYSO∶Ce闪烁晶体的研究进展[J]. 人工晶体学报, 2021, 50(10): 1858-1869.
[12]	马云峰, 徐家跃, 蒋毅坚, BOURRET-COURCHESNE Edith. 面向集装箱安检应用的Mg₄Ta₂O₉闪烁晶体及其掺杂改性[J]. 人工晶体学报, 2021, 50(10): 1870-1878.
[13]	何君雨, 李雯, 魏钦华, 童宇枫, 吴云涛, 杨洁男, 向鹏, 秦来顺. 1英寸Cs₂LiLaBr₆∶Ce闪烁晶体的生长及性能研究[J]. 人工晶体学报, 2021, 50(10): 1879-1882.
[14]	王绍涵, 吴云涛, 李焕英, 史坚, 任国浩. 基质组分配比对Cs₂LiYCl₆∶Ce晶体生长及闪烁性能的影响[J]. 人工晶体学报, 2021, 50(10): 1925-1932.
[15]	侯越云, 桂强, 张春生, 杨蕾, 袁辉平, 刘珊, 任国浩, 张明荣. Cs₂LiYCl₆∶Ce晶体的n/γ双探测闪烁性能研究[J]. 人工晶体学报, 2021, 50(10): 1933-1939.