4H碳化硅单晶中的位错

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (9-10): 1673-1690.

4H碳化硅单晶中的位错

杨光^1,2, 刘晓双^2,3, 李佳君^2,3, 徐凌波¹, 崔灿¹, 皮孝东^2,3, 杨德仁^2,3, 王蓉^2,3

1.浙江理工大学物理系,浙江省光场调控技术重点实验室,杭州 310018;
2.浙江大学杭州国际科创中心,杭州 311200;
3.浙江大学材料科学与工程学院,硅材料国家重点实验室,杭州 310027

收稿日期:2022-07-01 出版日期:2022-10-15 发布日期:2022-11-02
通信作者: 崔灿,博士,教授。E-mail:cancui@zstu.edu.cn
皮孝东,博士,教授。E-mail:xdpi@zju.ed.cn
王蓉,博士,研究员。E-mail:rong_wang@zju.edu.cn
作者简介:杨光(1998—),男,江苏省人,硕士研究生。E-mail:202030302215@mails.zstu.edu.cn。
崔灿,博士,浙江理工大学理学院教授、博士生导师。主要从事晶体生长和光电器件的研究工作,主持国家自然科学基金、浙江省自然科学基金等项目10余项,发表学术论文100余篇。
皮孝东,博士,浙江大学教授、博士生导师。主要从事大尺寸的碳化硅晶体和纳米尺度上的硅晶体的杂质与缺陷及其器件的应用研究。已经发表学术论文100余篇,拥有授权的发明专利20余项。
王蓉,博士,浙江大学杭州国际科创中心研究员。从事宽禁带半导体中的杂质与缺陷研究。在国际知名期刊和学术会议上发表论文50余篇,拥有授权的发明专利12项。
基金资助:
浙江省“尖兵”“领雁”研发攻关计划(2022C01021);国家重点研发计划(2018YFB2200101);国家自然科学基金重大研究计划项目(91964107)

Dislocations in 4H Silicon Carbide Single Crystals

YANG Guang^1,2, LIU Xiaoshuang^2,3, LI Jiajun^2,3, XU Lingbo¹, CUI Can¹, PI Xiaodong^2,3, YANG Deren^2,3, WANG Rong^2,3

1. Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China;
2. Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China;
3. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Received:2022-07-01 Online:2022-10-15 Published:2022-11-02

摘要/Abstract

摘要： 4H碳化硅(4H-SiC)单晶具有禁带宽度大、载流子迁移率高、热导率高和稳定性良好等优异特性,在高功率电力电子、射频/微波电子和量子信息等领域具有广阔的应用前景。经过多年的发展,6英寸(1英寸=2.54 cm)4H-SiC单晶衬底和同质外延薄膜已得到了产业化应用。然而,4H-SiC单晶中的总位错密度仍高达10³~10⁴ cm^-2,阻碍了4H-SiC单晶潜力的充分发挥。本文介绍了4H-SiC单晶中位错的主要类型,重点讲述4H-SiC单晶生长、衬底晶圆加工以及同质外延过程中位错的产生、转变和湮灭机理,并概述4H-SiC单晶中位错的表征方法,最后讲述了位错对4H-SiC单晶衬底和外延薄膜的性质,以及4H-SiC基功率器件性质的影响。

关键词: 4H碳化硅, 位错, 单晶, 外延, 电学性质, 光学性质

Abstract: Owing to the advantages of wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) has shown great potential in high-power electronics, RF/microwave electronics and quantum information. Although the industrialization of 6-inch 4H-SiC single crystals substrate and homoepitaxial films have been achieved after decades of development, the total dislocation density of 4H-SiC single crystal is still the order of magnitude of 10³~10⁴ cm^-3, which poses great challenge to the realization of the full potential of 4H-SiC. This review introduces the classification and basic properties of dislocations in 4H-SiC single crystal. The mechanism of generation, transformation and annihilation of dislocation between different types of dislocations during the growth, wafering, and the homoepitaxy of 4H-SiC single crystals are systematically reviewed. By introducing the characterization and identification of dislocations in 4H-SiC, the effect of dislocations on the properties of 4H-SiC is shown, and the device performance and reliability are also presented.

Key words: 4H silicon carbide, dislocation, single crystal, epitaxy film, electrical property, optical property

中图分类号:

TQ163⁺.4

杨光, 刘晓双, 李佳君, 徐凌波, 崔灿, 皮孝东, 杨德仁, 王蓉. 4H碳化硅单晶中的位错[J]. 人工晶体学报, 2022, 51(9-10): 1673-1690.

YANG Guang, LIU Xiaoshuang, LI Jiajun, XU Lingbo, CUI Can, PI Xiaodong, YANG Deren, WANG Rong. Dislocations in 4H Silicon Carbide Single Crystals[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1673-1690.

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