Ⅲ-Ⅵ族InSe半导体晶体生长研究进展

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (9-10): 1722-1731.

Ⅲ-Ⅵ族InSe半导体晶体生长研究进展

何峰^1,2, 白旭东^1,3, 陆欣昱⁴, 郑树颍⁴, 李荣斌⁴, 刘学超⁵, 魏天然⁶, 史迅⁵, 金敏⁴

1.上海理工大学材料与化学学院,上海 200093;
2.山东大学晶体材料国家重点实验室,济南 250100;
3.乌镇实验室,桐乡 314500;
4.上海电机学院材料学院,上海 201306;
5.中国科学院上海硅酸盐研究所,上海 201899;
6.上海交通大学材料科学与工程学院,上海 200240

收稿日期:2022-04-02 出版日期:2022-10-15 发布日期:2022-11-02
通信作者: 魏天然,博士,副教授。E-mail:tianran_wei@sjtu.edu.cn
金敏,博士,教授。E-mail:jmaish@aliyun.com
作者简介:何峰(1997—),男,安徽省人,硕士研究生。E-mail:95761476@qq.com。
魏天然,博士,上海交通大学材料科学与工程学院副教授、博士生导师。2012年毕业于山东大学材料科学与工程学院,获学士学位;2017年毕业于清华大学材料学院,获博士学位,其间于2015年在美国西北大学访问研究。2017—2018年供职于中国科学院上海硅酸盐研究所,2018年入职上海交通大学。主要从事热电材料的电热输运调控和性能优化、无机塑性半导体材料的探索开发等工作。以第一或通信作者身份在Science、Adv Mater、J Am Chem Soc、Adv Energy Mater、Joule等期刊上发表多篇论文。主持国家优秀青年科学基金等项目。
金敏,博士,上海电机学院教授,上海市曙光学者。2008年毕业于中国科学院上海硅酸盐研究所,获工学博士学位。长期从事先进材料研究及其产业化,研究领域包括半导体晶体、闪烁晶体、压电、铁电晶体的生长、表征及应用。在Science、ACS Energy Lett、Chem Mater、ACS Appl Mater Inter、Nano Energy、J Cryst Growth等期刊上发表论文80余篇,申请专利10余项,合作出版专著1本。主持或参与国家级省市科研项目20余项,曾获中华人民共和国教育部科技成果完成者证书、第一届人工晶体青年学术会议优秀青年学者及中国石油和化学工业优秀出版物二等奖。现为《人工晶体学报》青年编委、《上海电机学院学报》编委和《应用技术学报》编委。
基金资助:
上海市教委曙光计划;国家重点研发计划(2021YFA0716304);山东大学晶体材料国家重点实验室开放基金(KF2004)

Research Progress of Ⅲ-Ⅵ Group InSe Semiconductor Crystal Growth

HE Feng^1,2, BAI Xudong^1,3, LU Xinyu⁴, ZHENG Shuying⁴, LI Rongbin⁴, LIU Xuechao⁵, WEI Tianran⁶, SHI Xun⁵, JIN Min⁴

1. School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China;
2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
3. Wuzhen Laboratory, Tongxiang 314500, China;
4. College of Materials, Shanghai Dianji University, Shanghai 201306, China;
5. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China;
6. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

Received:2022-04-02 Online:2022-10-15 Published:2022-11-02

摘要/Abstract

摘要： Ⅲ-Ⅶ族InSe晶体是一种非常重要的化合物半导体材料，在高性能纳米电子器件、红外光探测、光电器件及柔性电子等领域有广泛应用。本文简要介绍了In-Se相图的发展历程，InSe具有非一致熔融特性，可通过包晶反应从准化学计量比或非化学计量比溶液中析晶获得，其中In/Se摩尔比对InSe转化率有重要影响。迄今，垂直布里奇曼法、提拉法、水平梯度凝固法、低温液相法及气相输运法等多种技术被成功用于制备InSe晶体。为全面了解InSe晶体生长的历史和现状，本文从工艺原理、技术要点、晶体生长结果等方面将国内外相关工作进行了梳理，并对各种方法的优缺点进行了比较。研究分析表明垂直布里奇曼法因对设备要求简单，操作简易，现已成为制备高质量大尺寸InSe晶体的主流技术；水平梯度凝固法则在ε型InSe晶体生长方面颇具特色，未来可在新材料性能研究与应用探索上与垂直布里奇曼法形成一定补充。

关键词: InSe, 半导体, 晶体生长, 垂直布里奇曼法

Abstract: Ⅲ-Ⅵ group InSe crystal is a very important compound semiconductor material, which is widely used in the fields of high-performance nano electronic devices, infrared light detection, photoelectric devices and flexible electronics. The development of In-Se phase diagram is briefly reviewed. InSe has incongruent melting characteristics that can be obtained by peritectic reaction from the quasi stoichiometric or non-stoichiometric solution, and the mole ratio of In/Se has an important influence on the productivity of InSe. In order to prepare InSe crystal, several techniques have been adopted in the past, such as vertical Bridgman method, Czochralski method, horizonal gradient freeze method, low temperature liquid phase method and vapor transfer method. In order to better understand the development of InSe crystal growth, this review summarizes the process principle, technical points, production of these techniques, and discsuses their advantages and disadvantages. It is shown that the vertical Bridgman method has become a mainstream method for preparing high quality and large size InSe crystals by virtue of the simple apparatus and feasible operation. The horizonal gradient freeze method is a special way for growing ε-InSe crystal, which would play a role of supplement to the vertical Bridgman method in the research and application of new material in the future.

Key words: InSe, semiconductor, crystal growth, vertical Bridgman method

中图分类号:

O734
TN304

何峰, 白旭东, 陆欣昱, 郑树颍, 李荣斌, 刘学超, 魏天然, 史迅, 金敏. Ⅲ-Ⅵ族InSe半导体晶体生长研究进展[J]. 人工晶体学报, 2022, 51(9-10): 1722-1731.

HE Feng, BAI Xudong, LU Xinyu, ZHENG Shuying, LI Rongbin, LIU Xuechao, WEI Tianran, SHI Xun, JIN Min. Research Progress of Ⅲ-Ⅵ Group InSe Semiconductor Crystal Growth[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1722-1731.

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