石墨烯上远程外延Ge纳米柱

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (9-10): 1769-1776.

石墨烯上远程外延Ge纳米柱

谢景龙^1,2, 袁国文^1,3, 廖俊杰^1,2, 潘睿^1,2, 樊星^1,2, 张微微^1,2, 袁紫媛^1,2, 李晨^1,2,4, 高力波^1,3, 芦红^1,2,4

1.固体微结构物理国家重点实验室,南京 210093;
2.南京大学现代工程与应用科学学院,南京 210023;
3.南京大学物理学院,南京 210093;
4.江苏省功能材料设计原理与应用技术重点实验室,南京 210023

收稿日期:2022-05-28 出版日期:2022-10-15 发布日期:2022-11-02
通信作者: 高力波,博士,教授。E-mail:lbgao@nju.edu.cn
芦红,博士,教授。E-mail:hlu@nju.edu.cn
作者简介:谢景龙(1995—),男,河南省人,博士研究生。E-mail:jlxie@smail.nju.edu.cn。
高力波,南京大学物理学院教授,博士生导师,2014年国家海外高层次人才计划,2016年江苏省双创人才。2006年本科毕业于大连理工大学材料系;2011年博士毕业于中国科学院金属研究所;2011年9月—2015年4月于新加坡国立大学石墨烯研究中心从事博士后研究。主要从事二维材料的可控制备与性质研究,以第一作者、通信作者身份在Nature、Nature Materials等发表多篇论文,迄今共发表SCI收录论文40余篇,引用超过10 000余次。
芦红,南京大学现代工程与应用科学学院教授,博士生导师,2014年中组部海外高层次人才计划。本科毕业于中国科学技术大学,后获纽约市立大学博士学位。在加州大学圣芭芭拉分校任职项目科学家,2014年10月加入南京大学。主要研究方向为半导体材料的光电和热学性质及红外、太赫兹光电芯片和半导体器件的热管理。在国际权威学术期刊Science、Nature Nanotechnology、Nature Communications、Advanced Materials等发表论文 120 余篇,获多项国际国内专利授权。
基金资助:
国家重点研发计划(2018YFA0306200,2017YFA0303702);国家自然科学基金重点项目(51732006,11890702,51721001)

Remote Epitaxy of Ge Nanorods Through Graphene

XIE Jinglong^1,2, YUAN Guowen^1,3, LIAO Junjie^1,2, PAN Rui^1,2, FAN Xing^1,2, ZHANG Weiwei^1,2, YUAN Ziyuan^1,2, LI Chen^1,2,4, GAO Libo^1,3, LU Hong^1,2,4

1. National Laboratory of Solid-State Microstructures, Nanjing 210093, China;
2. College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China;
3. School of Physics, Nanjing University, Nanjing 210093, China;
4. Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing 210023, China

Received:2022-05-28 Online:2022-10-15 Published:2022-11-02

摘要/Abstract

摘要： 远程外延能够突破传统外延中晶格匹配、热匹配等限制,近年来得到了广泛的关注。Ⅲ-Ⅴ族和Ⅲ-氮化合物半导体已经成功在石墨烯上远程外延生长,但Ⅳ族半导体的远程外延很少被报道。本文首次借助于分子束外延技术在石墨烯上远程外延制备了半导体Ge纳米柱,研究了其生长特性及剥离转移。结果表明:远程外延生长的Ge纳米柱为[111]c晶向,集中分布在石墨烯的褶皱以及衬底Cu-Ni原子台阶处;随着生长温度的提高,Ge纳米柱的高度和密度逐渐下降,但直径差别不大,约为55~65 nm;此外,自组织生长的Ge纳米棒显示无应变的生长状态;引入少量Sn形成GeSn纳米柱,能够显著提升Ge纳米柱的面密度。同时,生长的Ge纳米柱可实现剥离,有望实现异质集成,应用于先进光电子器件等领域。

关键词: 石墨烯, 远程外延, 分子束外延, 锗纳米柱, 硅基集成, 半导体

Abstract: Remote epitaxy has drawn great attention as it overcomes the limitations of conventional epitaxy that need the lattice and thermal diffusion coefficient matching well. Indeed, the remote interaction through graphene can get the high-quality semiconductor materials, and it also can form the freestanding membranes by releasing from the substrates. Although the Ⅲ-Ⅴ and Ⅲ-nitride compound semiconductors have successfully remote epitaxial grown on graphene, the Ⅳ group semiconductors are rarely reported. Herein, the semiconductor germanium nanorods (NRs) on monolayer graphene (MLG) substrate were successfully remote epitaxy grown using molecular beam epitaxy in this paper. Furthermore, the process of growth, lifting off and transferring was studied. Results show that the Ge NRs oriented [111]c nucleated and grew along the wrinkles of graphene and the atomic steps of Cu-Ni substrate. With the growth temperature increasing, the density and height of Ge NRs decrease gradually. However,the diameter of Ge NRs has little change between 55 nm to 65 nm. Meanwhile, the Ge nanorods by self-assembly are strain free. The surface density of Ge nanorods is improved significantly by introducing few Sn to form GeSn nanorods. Meanwhile, we successfully lifted off the Ge NRs and then transferred to the Si substrate, providing a novel strategy for the hetero-integration. This work provides a foundation for future research into the remote epitaxy of group Ⅳ semiconductors, more importantly, the technique is closely relevant to the hetero-integration for advanced devices.

Key words: graphene, remote epitaxy, molecular beam epitaxy, germanium nanorod, Si based integration, semiconductor

中图分类号:

O781
TM23

谢景龙, 袁国文, 廖俊杰, 潘睿, 樊星, 张微微, 袁紫媛, 李晨, 高力波, 芦红. 石墨烯上远程外延Ge纳米柱[J]. 人工晶体学报, 2022, 51(9-10): 1769-1776.

XIE Jinglong, YUAN Guowen, LIAO Junjie, PAN Rui, FAN Xing, ZHANG Weiwei, YUAN Ziyuan, LI Chen, GAO Libo, LU Hong. Remote Epitaxy of Ge Nanorods Through Graphene[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1769-1776.

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