磨料形貌及分散介质对4H碳化硅晶片研磨质量的影响研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (1): 48-55.

磨料形貌及分散介质对4H碳化硅晶片研磨质量的影响研究

张玺^1,2, 朱如忠^1,2, 张序清^1,2, 王明华³, 高煜⁴, 王蓉^1,2, 杨德仁^1,2, 皮孝东^1,2

1.浙江大学杭州国际科创中心先进半导体研究院,浙江省宽禁带功率半导体材料与器件重点实验室,杭州 311200;
2.浙江大学硅材料国家重点实验室,材料科学与工程学院,杭州 310027;
3.杭州乾晶半导体有限公司,杭州 311200;
4.浙江机电职业技术学院,杭州 310053

收稿日期:2022-08-22 出版日期:2023-01-15 发布日期:2023-02-15
通信作者: 王蓉,博士,研究员。E-mail:rong_wang@zju.edu.cn;皮孝东,博士,教授。E-mail:xdpi@zju.edu.cn
作者简介:张玺(1996—),女,湖北省人,硕士研究生。E-mail:zhangxi_@zju.edu.cn
基金资助:
浙江省“尖兵”“领雁”研发攻关计划(2022C01021);国家重点研发计划(2018YFB2200101);国家自然科学基金委员会重大研究计划培育项目(91964107)

Influence of Abrasive Morphology and Dispersion Medium on Lapping Quality of 4H-SiC Wafers

ZHANG Xi^1,2, ZHU Ruzhong^1,2, ZHANG Xuqing^1,2, WANG Minghua³, GAO Yu⁴, WANG Rong^1,2, YANG Deren^1,2, PI Xiaodong^1,2

1. Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China;
2. School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
3. IV Semitec Co., Ltd., Hangzhou 311200, China;
4. Zhejiang Institute of Mechanical and Electrical Technology, Hangzhou 310053, China

Received:2022-08-22 Online:2023-01-15 Published:2023-02-15

摘要/Abstract

摘要： 研磨作为4H碳化硅(4H-SiC)晶片加工的重要工序之一,对4H-SiC衬底晶圆的质量具有重要影响。本文研究了金刚石磨料形貌和分散介质对4H-SiC晶片研磨过程中材料去除速率和面型参数的影响,基于研磨过程中金刚石磨料与4H-SiC晶片表面的接触情况,推导出简易的晶片材料去除速率模型。研究结果表明,磨料形貌显著影响4H-SiC晶片的材料去除速率,材料去除速率越高,晶片的总厚度变化(TTV)越小。由于4H-SiC中C面和Si面的各向异性,4H-SiC晶片研磨过程中C面的材料去除速率高于Si面。在分散介质的影响方面:水基体系研磨液的Zeta电位绝对值较高,磨料分散均匀,水的高导热系数有利于控制研磨过程中的盘面温度;乙二醇体系研磨液的Zeta电位绝对值小,磨料易发生团聚,增大研磨过程的磨料切入深度,晶片的材料去除速率提高,晶片最大划痕深度随之增大。

关键词: 4H碳化硅, 研磨, 金刚石磨料, 分散介质, 材料去除速率, 面型参数

Abstract: As one of the most important steps in machine processing of 4H-silicon carbide (4H-SiC) wafers, lapping exerts an important impact on the quality of 4H-SiC substrate wafers. In this paper, the effects of diamond abrasive morphology and dispersion medium on the material removal rate and surface parameters of 4H-SiC wafers were investigated. Based on the contact between diamond abrasive and 4H-SiC wafer surface during lapping process, a simple wafer material removal rate model was derived. It is found that the abrasive morphology significantly affects the material removal rate of 4H-SiC substrate wafers, the higher the material removal rate, the smaller the total thickness variation (TTV) is obtained for 4H-SiC substrate wafers. Due to the anisotropy of C-face and Si-face of 4H-SiC, the material removal rate of C-face is higher than that of Si-face. In terms of effect of the dispersion medium, the Zeta potential absolute value of the water-based slurry is high, and the abrasive is evenly dispersed. It is beneficial to control the disc temperature during the lapping process due to the large thermal conductivity of water. The Zeta potential absolute value of the glycol-based slurry is small, and the abrasive is prone to agglomeration. As the abrasive cutting depth deepens in lapping process, the material removal rate of 4H-SiC wafer increases, and the maximum value of scratch depth also aggravates accordingly.

Key words: 4H-SiC, lapping, diamond abrasive, dispersion medium, material removal rate, surface parameter

中图分类号:

张玺, 朱如忠, 张序清, 王明华, 高煜, 王蓉, 杨德仁, 皮孝东. 磨料形貌及分散介质对4H碳化硅晶片研磨质量的影响研究[J]. 人工晶体学报, 2023, 52(1): 48-55.

ZHANG Xi, ZHU Ruzhong, ZHANG Xuqing, WANG Minghua, GAO Yu, WANG Rong, YANG Deren, PI Xiaodong. Influence of Abrasive Morphology and Dispersion Medium on Lapping Quality of 4H-SiC Wafers[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(1): 48-55.

参考文献

[1] 王世忠,徐良瑛,束碧云,等.SiC单晶的性质、生长及应用[J].无机材料学报,1999,14(4):527-534.
WANG S Z, XU L Y, SHU B Y, et al. Physical properties, bulk growth, and applications of SiC single crystal[J]. Journal of Inorganic Materials, 1999, 14(4): 527-534(in Chinese).
[2] KIMOTO T. Material science and device physics in SiC technology for high-voltage power devices[J]. Japanese Journal of Applied Physics, 2015, 54(4): 040103.
[3] SHE X, HUANG A Q, LUCÍA Ó, et al. Review of silicon carbide power devices and their applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8193-8205.
[4] WANG J, JIANG X. Review and analysis of SiC MOSFETs ruggedness and reliability[J]. IET Power Electronics, 2020, 13(3): 445-455.
[5] JIA H J, ZHANG H, YANG Y T. A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer[J]. Materials Science in Semiconductor Processing, 2012, 15(1): 2-5.
[6] 苏鹏飞,杨洪星,何远东,等.多线切割工艺对研磨去除量的影响[J].电子工业专用设备,2016,45(9):15-18.
SU P F, YANG H X, HE Y D, et al. The effect of multi-wire cutting process on the grinding removal[J]. Equipment for Electronic Products Manufacturing, 2016, 45(9): 15-18(in Chinese).
[7] GOEL S. The Current understanding on the diamond machining of silicon carbide[J]. Journal of Physics D: Applied Physics, 2014, 47(24): 243001.
[8] TREZONA R I, ALLSOPP D N, HUTCHINGS I M. Transitions between two-body and three-body abrasive wear: influence of test conditions in the microscale abrasive wear test[J]. Wear, 1999, 225/226/227/228/229: 205-214.
[9] GUO L, ZHANG X R, CHEN S B, et al. An experimental study on the precision abrasive machining process of hard and brittle materials with ultraviolet-resin bond diamond abrasive tools[J]. Materials, 2019, 12(1): 125.
[10] BERKMAN E, LEONARD R T, PAISLEY M J, et al. Defect status in SiC manufacturing[J]. Materials Science Forum, 2009, 615/616/617: 3-6.
[11] WU P, EMORHOKPOR E, YOGANATHAN M, et al. Dislocation in 4H n⁺ SiC substrates and their relationship with epilayer defects[J]. Materials Science Forum, 2007, 556/557: 247-250.
[12] OHTANI N. Toward the reduction of performance-limiting defects in SiC epitaxial substrates[J]. ECS Transactions, 2011, 41(8): 253-260.
[13] LIU X S, WANG R, ZHANG J R, et al. Doping-dependent nucleation of basal plane dislocations in 4H-SiC[J]. Journal of Physics D: Applied Physics, 2022, 55(33): 334002.
[14] TSAI M Y, LI K Y, JI S Y. Novel abrasive-impregnated pads and diamond plates for the grinding and lapping of single-crystal silicon carbide wafers[J]. Applied Sciences, 2021, 11(4): 1783.
[15] ZHOU P, ZHU N N, XU C Y, et al. Mechanical removal of SiC by multi-abrasive particles in fixed abrasive polishing using molecular dynamics simulation[J]. Computational Materials Science, 2021, 191: 110311.
[16] 胡海明,李淑娟,高晓春,等.SiC单晶片研磨过程材料去除率仿真与试验研究[J].兵工学报,2013,34(9):1125-1131.
HU H M, LI S J, GAO X C, et al. Simulation and experiment of MRR in lapping process of SiC monocrystal wafers[J]. Acta Armamentarii, 2013, 34(9): 1125-1131(in Chinese).
[17] 沈琦.多晶金刚石磨粒的制备和加工性能[D].南京:南京航空航天大学,2017:46-47.
SHEN Q. Preparation and machining performance of aggregated diamond abrasive[D]. Nanjing: Nanjing University of Aeronautics and Astronautics, 2017: 46-47(in Chinese).
[18] MAEDA H, TAKANABE R, TAKEDA A, et al. High-speed slicing of SiC ingot by high-speed multi wire saw[J]. Materials Science Forum, 2014, 778/779/780: 771-775.
[19] 徐伟,王英民,何超.金刚石多线切割材料去除率对SiC晶片翘曲度的影响[J].超硬材料工程,2016,28(1):24-27.
XU W, WANG Y M, HE C. Influence of diamond multi-wire cutting material removal rate on SiC wafer warpage[J]. Superhard Material Engineering, 2016, 28(1): 24-27(in Chinese).
[20] JIANGSU AUCKSUN INTEGRATED CIRCUIT CO. Method for controlling processing of BOW value of abrasive products, involves cutting sapphire ingots are into wafers using multi-wire, sorting cutter btained line-cut wafer is by positive and negative BOW surfaces: China, CN110722692-A[P]. 2020-01-24.
[21] 卢陈英.肝癌靶向SPIO/铁蛋白质粒复合纳米粒的MR分子影像诊断研究[D].杭州:浙江大学,2018.
LU C Y. MR molecular imaging diagnosis of hepatic tumor-targeting SPIO/ferritin plasmid complex nanoparticles[D]. Hangzhou: Zhejiang University, 2018(in Chinese).
[22] 刘丹,李杰,曹妍,等.纳米颗粒物对肺表面活性物质界面性质的影响[J].中国环境科学,2022,42(5):2379-2386.
LIU D, LI J, CAO Y, et al. Effect of nano-particles on interfacial chemical properties of pulmonary surfactant[J]. China Environmental Science, 2022, 42(5): 2379-2386(in Chinese).
[23] POWELL R W. Thermal conductivities and expansion coefficients of water and ice[J]. Advances in Physics, 1958, 7(26): 276-297.
[24] GANESHKUMAR J, KATHIRKAMAN D, RAJA K, et al. Experimental study on density, thermal conductivity, specific heat, and viscosity of water-ethylene glycol mixture dispersed with carbon nanotubes[J]. Thermal Science, 2017, 21(1 Part A): 255-265.