Gd3(Al,Ga)5O12∶Ce晶体生长与闪烁性能研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (12): 2156-2160.

Gd₃(Al,Ga)₅O₁₂∶Ce晶体生长与闪烁性能研究

王海丽^1,2, 李辉^1,2, 周南浩^1,2, 石爽爽^1,2, 苏健², 张微^1,2, 陈建荣^1,2, 黄存新^1,2

1.北京中材人工晶体研究院有限公司,北京 100018;
2.中材人工晶体研究院有限公司,北京 100018

收稿日期:2023-09-25 出版日期:2023-12-15 发布日期:2023-12-26
作者简介:王海丽(1977—),女,山东省人,博士,教授级高工。E-mail:hailiwang02@163.com
基金资助:
国家重点研发计划(2017YFB0310500)

Growth and Scintillation Properties of Gd₃(Al,Ga)₅O₁₂∶Ce Crystal

WANG Haili^1,2, LI Hui^1,2, ZHOU Nanhao^1,2, SHI Shuangshuang^1,2, SU Jian², ZHANG Wei^1,2, CHEN Jianrong^1,2, HUANG Cunxin^1,2

1. Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing 100018, China;
2. Sinoma Synthetic Crystals Co., Ltd., Beijing 100018, China

Received:2023-09-25 Online:2023-12-15 Published:2023-12-26

摘要/Abstract

摘要： 掺铈钆铝镓石榴石(Gd₃(Al,Ga)₅O₁₂∶Ce,简称GAGG∶Ce)闪烁晶体是近年来发现的一种新型稀土闪烁晶体,具有光输出高、能量分辨率高、衰减时间短、无自辐射和不潮解等优点,在核医学成像、安检和环境监测等领域具有广阔的应用前景。本文报道了GAGG∶Ce晶体的提拉法生长与闪烁性能表征。利用高温固相反应法合成GAGG∶Ce原料,采用XRD对合成的原料进行了物相分析,结果表明,在1 500 ℃下煅烧12 h合成的多晶料为纯GAGG相。利用提拉法生长出尺寸ϕ50 mm×90 mm的GAGG∶Ce晶体,测试了其透过光谱、X射线激发发射光谱和脉冲高度谱,结果表明,7 mm厚样品550 nm的透过率为81.5%,晶体X射线激发发射峰中心波长位于550 nm,晶体的光输出为59 000 photons/MeV,能量分辨率为6.2%@662 keV,晶体衰减时间快分量为149 ns,慢分量为748 ns。

关键词: GAGG:Ce, 闪烁晶体, 高温固相反应法, 提拉法, 闪烁性能

Abstract: Ce³⁺ doped gadolinium aluminum gallium garnet (GAGG∶Ce) scintillation crystal has the advantages of high light output, high energy resolution, short decay time, no self radiation and non-deliquescence, which make it has a broad application prospect in nuclear medical imaging, security inspection and environment detection et al. This paper reported the Czochralski growth and scintillation properties of GAGG∶Ce single crystal. GAGG∶Ce raw material was synthesized by high temperature solid state reaction method. By means of XRD analysis, the raw material sintered at 1 500 ℃ for 12 h is verified to be pure GAGG phase. GAGG∶Ce crystal with size of ϕ50 mm×90 mm was successfully grown by Czochralski method. The transmission spectrum, X-ray excited emission spectrum and pulse height spectrum of the crystal were tested. Results show that optical transmittance at 550 nm for the sample with thickness of 7 mm reaches as high as 81.5%. The X-ray excited emission peak central wavelength of the GAGG∶Ce crystal is located at 550 nm. The light output of the GAGG∶Ce crystal is 59 000 photons/MeV and the energy resolution is 6.2%@662 keV. The decay time is 149 ns and a slow component of 748 ns.

Key words: GAGG:Ce, scintillation crystal, high temperature solid state reaction method, Czochralski method, scintillation property

中图分类号:

O734

王海丽, 李辉, 周南浩, 石爽爽, 苏健, 张微, 陈建荣, 黄存新. Gd₃(Al,Ga)₅O₁₂∶Ce晶体生长与闪烁性能研究[J]. 人工晶体学报, 2023, 52(12): 2156-2160.

WANG Haili, LI Hui, ZHOU Nanhao, SHI Shuangshuang, SU Jian, ZHANG Wei, CHEN Jianrong, HUANG Cunxin. Growth and Scintillation Properties of Gd₃(Al,Ga)₅O₁₂∶Ce Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(12): 2156-2160.

参考文献

[1] 任国浩. 无机闪烁晶体的发展趋势[J]. 人工晶体学报, 2012, 41(增刊): 184-188.
REN G H. Development trend of inorganic scintillation crystals [J]. Journal of Synthetic Crystals, 2012, 41(supplyment): 184-188 (in Chinese).
[2] KAMADA K, YANAGIDA T, ENDO T, et al. 2-inch size single crystal growth and scintillation properties of new scintillator; Ce∶Gd₃Al₂Ga₃O₁₂[C]//2011 IEEE Nuclear Science Symposium Conference Record. October 23-29, 2011, Valencia, Spain. IEEE, 2012: 1927-1929.
[3] TYAGI M, MENG F, KOSCHAN M, et al. Effect of codoping on scintillation and optical properties of a Ce-doped Gd₃Ga₃Al₂O₁₂ scintillator[J]. Journal of Physics D: Applied Physics, 2013, 46(47): 475302.
[4] KIM H L, KIM H J, JANG E J. Scintillation properties of the Gd₃Al₂Ga₃O₁₂∶Ce crystal[J]. Journal of Ceramic Processing Research, 2015, 16: 124-128.
[5] MENG F, KOSCHAN M, MELCHER C L, et al. Sintered pellets: a simple and cost effective method to predict the performance of GGAG∶Ce single crystals[J]. Materials Science and Engineering: B, 2015, 193: 20-26.
[6] SIBCZYNSKI P, IWANOWSKA-HANKE J, MOSZYN＇SKI M, et al. Characterization of GAGG∶Ce scintillators with various Al-to-Ga ratio[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015, 772: 112-117.
[7] KAMADA K, NIKL M, KUROSAWA S, et al. Alkali earth co-doping effects on luminescence and scintillation properties of Ce doped Gd₃Al₂Ga₃O₁₂ scintillator[J]. Optical Materials, 2015, 41: 63-66.
[8] SCHNEIDER F R, SHIMAZOE K, SOMLAI-SCHWEIGER I, et al. A PET detector prototype based on digital SiPMs and GAGG scintillators[J]. Physics in Medicine and Biology, 2015, 60(4): 1667-1679.
[9] KAMADA K, KUROSAWA S, PRUSA P, et al. Cz grown 2-in. size Ce∶Gd₃(Al, Ga)₅O₁₂ single crystal; relationship between Al, Ga site occupancy and scintillation properties[J]. Optical Materials, 2014, 36(12): 1942-1945.
[10] KOCHURIKHIN V, KAMADA K, JIN KIM K, et al. Czochralski growth of 4-inch diameter Ce∶Gd₃Al₂Ga₃O₁₂ single crystals for scintillator applications[J]. Journal of Crystal Growth, 2020, 531: 125384.
[11] 冯大建, 丁雨憧, 刘军, 等. Ce∶GAGG闪烁晶体生长与性能研究[J]. 压电与声光, 2016, 38(3): 430-432.
FENG D J, DING Y C, LIU J, et al. Study on the growth and scintillation properties of Ce∶GAGG crystal[J]. Piezoelectrics & Acoustooptics, 2016, 38(3): 430-432 (in Chinese).
[12] 孟猛, 祁强, 丁栋舟, 等. 新型闪烁晶体Gd₃(Al, Ga)₅O₁₂∶Ce³⁺的研究进展[J]. 人工晶体学报, 2019, 48(8): 1386-1394.
MENG M, QI Q, DING D Z, et al. Research progress on novel scintillation crystal Gd₃(Al, Ga)₅O₁₂∶Ce³⁺[J]. Journal of Synthetic Crystals, 2019, 48(8): 1386-1394 (in Chinese).
[13] 孟猛, 祁强, 丁栋舟, 等. Gd₃(Al, Ga)₅O₁₂∶Ce闪烁晶体扭曲生长、组分偏析与性能研究[J]. 无机材料学报, 2021, 36(2): 188-196.
MENG M, QI Q, DING D Z, et al. Twisted growth, component segregation and characteristics of Gd₃(Al, Ga)₅O₁₂ scintillation crystal[J]. Journal of Inorganic Materials, 2021, 36(2): 188-196 (in Chinese).

[1]	王京康, 王承二, 孙希磊, 王治华, 李云云, 李焕英, 任国浩, 吴云涛. Li掺杂浓度对NaI∶Tl,Li晶体光学和闪烁性能的影响[J]. 人工晶体学报, 2023, 52(9): 1582-1588.
[2]	张榕贵, 陈腾波, 李来超, 李玉虎, 马艳丽. Dy、Lu掺杂对TSAG晶体磁光特性影响研究[J]. 人工晶体学报, 2023, 52(8): 1407-1412.
[3]	李兴旺, 韩剑锋, 芦佳, 邢晓文, 王永国, 魏磊, 徐学珍. 大尺寸Tm∶YAP复合激光晶体的生长与性能研究[J]. 人工晶体学报, 2023, 52(7): 1236-1242.
[4]	黄建华, 吴杰, 黄艺东, 林炎富, 龚兴红, 陈雨金. Er³⁺,Yb³⁺∶Ba₃Gd(PO₄)₃晶体的生长、光谱和1.5 μm激光性能[J]. 人工晶体学报, 2023, 52(7): 1286-1295.
[5]	李兴旺, 杨宇, 芦佳, 董畅, 王永国, 徐学珍. 大尺寸氟化铽锂晶体生长与性能[J]. 人工晶体学报, 2023, 52(7): 1352-1356.
[6]	李兴旺, 杨国利, 韩剑锋, 王永国, 毕海, 徐学珍. 提拉法生长直径10英寸优质Yb:YAG激光晶体[J]. 人工晶体学报, 2023, 52(4): 547-549.
[7]	侯越云, 刘建强, 杨蕾, 闫晋力, 张明荣, 刘晓阳. 坩埚下降法生长的大尺寸BaF₂:Y闪烁晶体的闪烁性能及辐照损伤研究[J]. 人工晶体学报, 2023, 52(4): 584-589.
[8]	王晓莉, 杨蕾, 侯越云. 中子/伽马双探测用稀土卤化物闪烁晶体的研究进展[J]. 人工晶体学报, 2023, 52(4): 671-677.
[9]	赵美丽, 孙涛峰, 桂强, 张春生, 王树印, 刘珊, 李新乔, 安正华, 杨生. 引力波伽马射线暴探测用大尺寸溴化镧晶体封装件的制备及性能研究[J]. 人工晶体学报, 2023, 52(3): 414-420.
[10]	王海丽, 周南浩, 许婉芬, 张微, 李焕英, 韩加红, 陈建荣. LaBr₃∶Ce,Sr闪烁晶体的生长及性能研究[J]. 人工晶体学报, 2023, 52(12): 2161-2166.
[11]	力茂林, 徐悟生, 张斌, 田东升, 尹祖荣, 张镇玺, 贾永超, 徐朝鹏. 大尺寸掺铊碘化钠晶体生长及闪烁性能[J]. 人工晶体学报, 2023, 52(1): 17-24.
[12]	金敏. 晶体人生丨介万奇:辐射探测半导体晶体拓荒者[J]. 人工晶体学报, 2022, 51(9-10): 1523-1526.
[13]	张雨彤, 朱梦淇, 王彪, 贾鑫辉, 李静, 王继扬. 碳酸钙镁石家族非线性光学晶体研究进展[J]. 人工晶体学报, 2022, 51(9-10): 1608-1625.
[14]	罗亮, 王承二, 余金秋. 掺Sr²⁺溴化铈晶体的生长与闪烁性能研究[J]. 人工晶体学报, 2022, 51(8): 1337-1342.
[15]	唐华纯, 李中波, 张亮. 低余辉碘化铯闪烁晶体的生长与性能研究[J]. 人工晶体学报, 2022, 51(7): 1147-1151.

Gd₃(Al,Ga)₅O₁₂∶Ce晶体生长与闪烁性能研究

Growth and Scintillation Properties of Gd₃(Al,Ga)₅O₁₂∶Ce Crystal

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价